Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO 2 fluid treatment

Applied Physics Letters

Volumn 99, Issue 26, 2011, Pages

  Chang, Kuan Chang ^a   Tsai, Tsung Ming ^a   Chang, Ting Chang ^a,b   Syu, Yong En ^b   Wang, Chia C ^a   Chuang, Siang Lan ^a   Li, Cheng Hua ^a   Gan, Der Shin ^a   Sze, Simon M ^a,c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT CONDUCTION; FLUID TREATMENTS; MATERIAL ANALYSIS; NI-DOPED; OPERATION CURRENTS; PASSIVATION EFFECT; RESISTANCE RANDOM ACCESS MEMORY; SCHOTTKY EMISSIONS; SUPERCRITICAL CO; SUPERCRITICAL FLUID TECHNOLOGY;

CARBON DIOXIDE; EFFLUENT TREATMENT; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NICKEL OXIDE; PASSIVATION; SILICON COMPOUNDS; SILICON OXIDES; SUPERCRITICAL FLUIDS; X RAY PHOTOELECTRON SPECTROSCOPY;

RANDOM ACCESS STORAGE;

EID: 84862945931     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3671991     Document Type: Article

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