Low temperature improvement method on Zn:SiOx resistive random access memory devices

IEEE Electron Device Letters

Volumn 34, Issue 4, 2013, Pages 511-513

  Chang, Kuan Chang ^a   Tsai, Tsung Ming ^a   Chang, Ting Chang ^a   Wu, Hsing Hua ^b   Chen, Kai Huang ^c   Chen, Jung Hui ^d   Young, Tai Fa ^a   Chu, Tian Jian ^a   Chen, Jian Yu ^a   Pan, Chih Hung ^a   Su, Yu Ting ^a   Syu, Yong En ^a   Tung, Cheng Wei ^a   Chang, Geng Wei ^b   Chen, Min Chen ^a   Huang, Hui Chun ^a   Tai, Ya Hsiang ^b   Gan, Der Shin ^a   Wu, Jia Jie ^e   Hu, Ying ^e   Sze, Simon M ^a,b   more..

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c TUNG FANG DESIGN UNIVERSITY   (Taiwan)

^d NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

^e XIDIAN UNIVERSITY   (China)

Author keywords

Nonvolatile memory; resistive switching; silicon oxide; zinc

Indexed keywords

FLUID TREATMENTS; IMPROVEMENT METHODS; LOW TEMPERATURE TREATMENT; NON-VOLATILE MEMORY; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; SUPERCRITICAL CARBON DIOXIDES;

CARBON DIOXIDE; FLAT PANEL DISPLAYS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; RANDOM ACCESS STORAGE; SILICON OXIDES; SUPERCRITICAL FLUID EXTRACTION; SWITCHING SYSTEMS; TEMPERATURE; THIN FILMS;

ZINC;

EID: 84875684953     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2248075     Document Type: Article

References (12)

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