Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices

IEEE Electron Device Letters

Volumn 34, Issue 5, 2013, Pages 677-679

  Chang, Kuan Chang ^a   Zhang, Rui ^b   Chang, Ting Chang ^a,c   Tsai, Tsung Ming ^a   Lou, J C ^b   Chen, Jung Hui ^d   Young, Tai Fa ^a   Chen, Min Chen ^a,c   Yang, Ya Liang ^a   Pan, Yin Chih ^a   Chang, Geng Wei ^e   Chu, Tian Jian ^a   Shih, Chih Cheng ^d   Chen, Jian Yu ^a,c   Pan, Chih Hung ^a   Su, Yu Ting ^a,c   Syu, Yong En ^a,c   Tai, Ya Hsiang ^e   Sze, Simon M ^a,e  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b PEKING UNIVERSITY   (China)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

^e NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Conduction; graphene oxide; hopping; redox reaction; resistance random access memory (RRAM)

Indexed keywords

GRAPHENE OXIDES; HOPPING; HOPPING CONDUCTION; INCREASING TEMPERATURES; IV CHARACTERISTICS; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING MEMORY; SWITCHING PERFORMANCE;

FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAPHENE; HEAT CONDUCTION; REDOX REACTIONS; SILICON OXIDES; ZIRCONIUM;

NONVOLATILE STORAGE;

EID: 84876971083     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2250899     Document Type: Article

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