High performance of graphene oxide-doped silicon oxide-based resistance random access memory

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-6

  Zhang, Rui ^a   Chang, Kuan Chang ^b   Chang, Ting Chang ^b,c   Tsai, Tsung Ming ^b   Chen, Kai Huang ^d   Lou, Jen Chung ^a   Chen, Jung Hui ^e   Young, Tai Fa ^b   Shih, Chih Cheng ^b   Yang, Ya Liang ^b   Pan, Yin Chih ^b   Chu, Tian Jian ^b   Huang, Syuan Yong ^b   Pan, Chih Hung ^b   Su, Yu Ting ^b   Syu, Yong En ^b   Sze, Simon M ^f  

^a PEKING UNIVERSITY   (China)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d Tung Fang Design Institute   (Taiwan)

^e NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

^f NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Graphene oxide; High performance; Hopping conduction; RRAM

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAPHENE OXIDE; RRAM; SILICON COMPOUNDS; SILICON OXIDES;

DOUBLE LAYER STRUCTURE; HIGH PERFORMANCE; HIGH-RESISTANCE STATE; HOPPING CONDUCTION; LOW OPERATING CURRENT; RAMAN AND FTIR SPECTRUM; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING MEMORY;

GRAPHENE;

EID: 84891431402     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-497     Document Type: Article

References (47)

1. Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H: Roomtemperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 2004, 432:488.
2. 2O plasma improved InGaZnO thin film transistor. Appl Phys Lett 2010, 96:242105.
3. Chen TC, Chang TC, Tsai CT, Hsieh TY, Chen SC, Lin CS, Hung MC, Tu CH, Chang JJ, Chen PL: Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress. Appl Phys Lett 2010, 97:112104.
4. 4 channel fabricated by room temperature rf-magnetron sputtering. Appl Phys Lett 2006, 89:112123.
5. Chen TC, Chang TC, Hsieh TY, Lu WS, Jian FY, Tsai CT, Huang SY, Lin CS: Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor. Appl Phys Lett 2011, 99:022104.
6. Chung WF, Chang TC, Li HW, Chen SC, Chen YC, Tseng TY, Tai YH: Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors. Appl Phys Lett 2011, 98:152109.
7. Jeong S, Ha YG, Moon J, Facchetti A, Marks TJ: Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors. Adv Mater 2010, 22:1346-1350.
8. Tsao SW, Chang TC, Huang SY, Chen MC, Chen SC, Tsai CT, Kuo YJ, Chen YC, Wu WC: Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors. Solid State Electron 2010, 54:1497-1499.
9. x passivation layer formed by plasmaenhanced-chemical-vapor-deposition. Appl Phys Lett 2010, 97:192103.
10. Chen WR, Chang TC, Yeh JL, Sze SM, Chang CY: Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application. Appl Phys Lett 2008, 92:152114.
11. Yeh PH, Chen LJ, Liu PT, Wang DY, Chang TC: Metal nanocrystals as charge storage nodes for nonvolatile memory devices. Electrochim Acta 2007, 52:2920-2926.
12. Jiang DD, Zhang MH, Huo ZL, Wang Q, Liu J, Yu ZA, Yang XN, Wang Y, Zhang B, Chen JN, Liu M: A study of cycling induced degradation mechanisms in Si nanocrystal memory devices. Nanotechnology 2011, 22:254009.
13. Pavan P, Bez R, Olivo P, Zanoni E: Flash memory cells-an overview. Proc IEEE 1997, 85:8.
14. Bu J, White MH: Design considerations in scaled SONOS nonvolatile memory devices. Solid State Electron 2001, 45:1.
15. Chang TC, Jian FY, Chen SC, Tsai YT: Developments in nanocrystal memory. Mater Today 2011, 14:608.
16. Zhen L, Guan W, Shang L, Liu M, Liu G: Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric. J Phys D Appl Phys 2008, 41:135111.
17. Tsai YT, Chang TC, Lin CC, Chen SC, Chen CW, Sze SM, Yeh FS, Tseng TY: Influence of nanocrystals on resistive switching characteristic in binary metal oxides memory devices. Electrochem Solid-State Lett 2011, 14:H135-H138.
18. Guan WH, Long SB, Jia R, Liu M: Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide. Appl Phys Lett 2007, 91:062111.
19. + implanted. Appl Phys Lett 2008, 92:012117.
20. Syu YE, Chang TC, Tsai TM, Hung YC, Chang KC, Tsai MJ, Kao MJ, Sze SM: Redox reaction switching mechanism in RRAM device with Pt/CoSiOX/ TiN structure. IEEE Electron Device Lett 2011, 32:545.
21. 2 fluid treatment. IEEE Electron Device Lett 2012, 33:1693.
22. Tsai TM, Chang KC, Chang TC, Syu YE, Chuang SL, Chang GW, Liu GR, Chen MC, Huang HC, Liu SK, Tai YH, Gan DS, Yang YL, Young TF, Tseng BH, Chen KH, Tsai MJ, Ye C, Wang H, Sze SM: Bipolar resistive RAM characteristics induced by nickel incorporated into silicon oxide dielectrics for IC applications. IEEE Electron Device Lett 2012, 33:1696.
23. Chen MC, Chang TC, Tsai CT, Huang SY, Chen SC, Hu CW, Sze SM, Tsai MJ: Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films. Appl Phys Lett 2010, 96:262110.
24. x memristor. Appl Phys Lett 2013, 102:172903.
25. Liu M, Abid Z, Wang W, He XL, Liu Q, Guan WH: Multilevel resistive switching with ionic and metallic filaments. Appl Phys Lett 2009, 94:233106.
26. Chang KC, Tsai TM, Chang TC, Wu HH, Chen JH, Syu YE, Chang GW, Chu TJ, Liu GR, Su YT, Chen MC, Pan JH, Chen JY, Tung CW, Huang HC, Tai YH, Gan DS, Sze SM: Characteristics and mechanisms of silicon-oxide-based resistance random access memory. IEEE Electron Device Lett 2013, 34:399-401.
27. 2/Ag structure for low voltage nonvolatile memory applications. IEEE Electron Device Lett 2010, 31:117-119.
28. 2 fluid treatment. IEEE Electron Device Lett 2013, 34:617-619.
29. Chang KC, Tsai TM, Chang TC, Wu HH, Chen KH, Chen JH, Young TF, Chu TJ, Chen JY, Pan CH, Su YT, Syu YE, Tung CW, Chang GW, Chen MC, Huang HC, Tai YH, Gan DS, Wu JJ, Hu Y, Sze SM: Low temperature improvement method on Zn:SiOx resistive random access memory devices. IEEE Electron Device Lett 2013, 34:511-513.
30. Syu YE, Chang TC, Tsai TM, Chang GW, Chang KC, Lou JH, Tai YH, Tsai MJ, Wang YL, Sze SM: Asymmetric carrier conduction mechanism by tip electric field in WSiOx resistance switching device. IEEE Electron Device Lett 2012, 33(3):342-344.
31. 2 fluid process. Appl Phys Lett 2013, 103:083509.
32. Chang KC, Zhang R, Chang TC, Tsai TM, Lou JC, Chen JH, Young TF, Chen MC, Yang YL, Pan YC, Chang GW, Chu TJ, Shih CC, Chen JY, Pan CH, Su YT, Syu YE, Tai YH, Sze SM: Origin of hopping conduction in graphene-oxidedoped silicon oxide resistance random access memory devices. IEEE Electron Device Lett 2013, 34(5):677-679.
33. 2 fluid treatment. Appl Phys Lett 2012, 101:112906.
34. Chang KC, Tsai TM, Chang TC, Syu YE, Liao KH, Chuang SL, Li CH, Gan DS, Sze SM: The effect of silicon oxide based RRAM with tin doping. Electrochem Solid-State Lett 2012, 15(3):H65-H68.
35. Chang KC, Tsai TM, Chang TC, Syu YE, Wang C-C, Liu SK, Chuang SL, Li CH, Gan DS, Sze SM: Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment. Appl Phys Lett 2011, 99(26):263501.
36. x/ SiGeON Double Layer for Nonvolatile Memory Applications. Electrochem Solid-State Lett 2012, 14(10):H419-H421.
37. X thin films. Appl Phys Lett 2012, 100:022904.
38. Tsai TM, Chang KC, Zhang R, Chang TC, Lou JC, Chen JH, Young TF, Tseng BH, Shih CC, Pan YC, Chen MC, Pan JH, Syu YE, Sze SM: Performance and characteristics of double layer porous silicon oxide resistance random access memory. Appl Phys Lett 2013, 102(25):253509.
39. Su YT, Chang KC, Chang TC, Tsai TM, Zhang R, Lou JC, Chen JH, Young TF, Chen KH, Tseng BH, Shih CC, Yang YL Chen MC, Chu TJ, Pan CH, Syu YE, Sze SM: Characteristics of hafnium oxide resistance random access memory with different setting compliance current. Appl Phys Lett 2013, 103(16):163502.
40. Geim AK, Novoselov KS: The rise of grapheme. Nature Mater 2007, 6:3.
41. Dreyer DR, Park S, Bielawski CW, Ruoff RS: The chemistry of graphene oxide. Chem Soc Rev 2010, 39:1.
42. Zhuge F, Hu B, He C, Zhou X, Liu Z, Li R: Mechanism of nonvolatile resistive switching in graphene oxide thin films. Carbon 2011, 49:12.
43. Liao SH, Liu PL, Hsiao MC, Teng CC, Wang CA, Ger MD, Chiang CL: Onestep reduction and functionalization of graphene oxide with phosphorus-based compound to produce flame-retardant epoxy nanocomposite. Ind Eng Chem Res 2012, 51:12.
44. Jug K: A bond order approach to ring current and aromaticity. J Org Chem 1983, 48:8.
45. 2:Cu/Pt RRAM device. IEEE Electron Device Lett 2011, 32:3.
46. 2. IEEE Electron Devices Lett 2008, 29:5.
47. Chen D, Feng H, Li J: Graphene oxide: preparation, functionalization, and electrochemical applications. Chem Rev 2012, 112:11.