Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy

Applied Physics Letters

Volumn 99, Issue 22, 2011, Pages

  Zhu, Chenxin ^a   Xu, Zhongguang ^a   Huo, Zongliang ^a   Yang, Rong ^b   Zheng, Zhiwei ^a   Cui, Yanxiang ^b   Liu, Jing ^a   Wang, Yumei ^b   Shi, Dongxia ^b   Zhang, Guangyu ^b   Li, Fanghua ^b   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BILAYER; CHARGE TRAP; DIFFUSION COEFFICIENTS; ELECTROSTATIC FORCE MICROSCOPY; HIGH-DENSITY; INTERFACE EFFECT; LOSS CHARACTERISTICS; NAND FLASH; POST-DEPOSITION ANNEAL; SINGLE LAYER; SPREADING PROPERTY; TRAP SITES; TRAPPING LAYERS;

CHARGE TRAPPING; ELECTROSTATIC DEVICES; ELECTROSTATIC FORCE; HAFNIUM OXIDES;

ELECTRIC FORCE MICROSCOPY;

EID: 82955164092     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3664222     Document Type: Article

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