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Volumn 15, Issue 3, 2012, Pages

The effect of silicon oxide based RRAM with tin doping

(8) Chang, Kuan Chang a Tsai, Tsung Ming a Chang, Ting Chang a,b Syu, Yong En a Chuang, Siang Lan a Li, Cheng Hua a Gan, Der Shin a Sze, Simon M a,c,d

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

d Stanford University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION PATHS; CURRENT TRANSPORT MECHANISM; ELECTRICAL ANALYSIS; INDUCED DEFECTS; METAL-DOPING; OXIDE MATERIALS; RESISTANCE RANDOM ACCESS MEMORY; ROOM TEMPERATURE; SEMICONDUCTOR INDUSTRY; SN DOPING; SN-DOPED;

DEFECTS; ELECTRIC PROPERTIES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON OXIDES; TIN;

RANDOM ACCESS STORAGE;

EID: 84862918423 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/2.013203esl Document Type: Article

Times cited : (53)

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