Resistance switching at the nanometre scale in amorphous carbon

New Journal of Physics

Volumn 13, Issue , 2011, Pages

  Sebastian, Abu ^a,e   Pauza, Andrew ^b   Rossel, Christophe ^a   Shelby, Robert M ^c   Rodríguez, Arantxa Fraile ^d,e   Pozidis, Haralampos ^a   Eleftheriou, Evangelos ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

^b Plarion Limited   (United Kingdom)

^c IBM ALMADEN RESEARCH CENTER   (United States)

^d PAUL SCHERRER INSTITUTE   (Switzerland)

^e UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

A-C THIN FILMS; AMORPHOUS CARBON (A-C); ATOMIC ORDERS; CANDIDATE MATERIALS; ELECTRICAL CONDUCTION; ELECTRICAL TRANSPORT; HIGH ELECTRIC FIELDS; MATRIX; NANO SCALE; NANOMETRES; NON-VOLATILE MEMORIES; NONISOLATED; POOLE-FRENKEL; RESISTANCE CHANGE; RESISTANCE SWITCHING; THERMAL-ANNEALING; THRESHOLD SWITCHING; TRANSPORT MODELS;

ELECTRIC FIELDS; HEATING; NANOSTRUCTURED MATERIALS; SWITCHING;

AMORPHOUS CARBON;

EID: 79251545182     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/13/1/013020     Document Type: Article

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