Charge quantity influence on resistance switching characteristic during forming process

IEEE Electron Device Letters

Volumn 34, Issue 4, 2013, Pages 502-504

  Chu, Tian Jian ^a   Chang, Ting Chang ^a   Tsai, Tsung Ming ^a   Wu, Hsing Hua ^b   Chen, Jung Hui ^c   Chang, Kuan Chang ^a   Young, Tai Fa ^a   Chen, Kai Hsang ^d   Syu, Yong En ^a   Chang, Geng Wei ^b   Chang, Yao Feng ^e   Chen, Min Chen ^a   Lou, Jyun Hao ^a   Pan, Jhih Hong ^a   Chen, Jian Yu ^a   Tai, Ya Hsiang ^b   Ye, Cong ^f   Wang, Hao ^f   Sze, Simon M ^a,b  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

^d TUNG FANG DESIGN UNIVERSITY   (Taiwan)

^e The University of Texas at Austin   (United States)

^f HUBEI UNIVERSITY   (China)

Author keywords

Forming process; hafnium oxide ( HfO2); nonvolatile memory; resistance switching

Indexed keywords

CONDUCTION PATHS; CRITICAL FACTORS; DISCONTINUOUS CONDUCTION; NON-VOLATILE MEMORY; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; RESISTANCE SWITCHING BEHAVIORS; ULTRAFAST PULSE;

HAFNIUM OXIDES;

SWITCHING;

EID: 84875663086     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2242843     Document Type: Article

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