Bipolar resistive RAM characteristics induced by nickel incorporated into silicon oxide dielectrics for IC applications

IEEE Electron Device Letters

Volumn 33, Issue 12, 2012, Pages 1696-1698

  Tsai, Tsung Ming ^a   Chang, Kuan Chang ^a   Chang, Ting Chang ^a,b   Syu, Yong En ^a,b   Chuang, Siang Lan ^d   Chang, Geng Wei ^c   Liu, Guan Ru ^a,b   Chen, Min Chen ^a,b   Huang, Hui Chun ^a   Liu, Shih Kun ^d   Tai, Ya Hsiang ^c   Gan, Der Shin ^a   Yang, Ya Liang ^a   Young, Tai Fa ^a   Tseng, Bae Heng ^a   Chen, Kai Huang ^e   Tsai, Ming Jinn ^f   Ye, Cong ^g   Wang, Hao ^g   Sze, Simon M ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^e TUNG FANG DESIGN UNIVERSITY   (Taiwan)

^f INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^g HUBEI UNIVERSITY   (China)

Author keywords

nickel; Nonvolatile memory (NVM); resistive switching; silicon oxide

Indexed keywords

COSPUTTERING; IC PROCESS; INTEGRATED CIRCUIT INDUSTRIES; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; OXIDE DIELECTRIC; RESISTANCE SWITCHING; RESISTIVE RAMS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; ROOM TEMPERATURE;

DIELECTRIC MATERIALS; RANDOM ACCESS STORAGE; SILICON OXIDES; SWITCHING SYSTEMS;

NICKEL;

EID: 84870441521     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2217933     Document Type: Article

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