SCOPUS 정보 검색 플랫폼

Volumn 97, Issue 25, 2010, Pages

Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trapping layer

(8) Zhu, Chenxin a Huo, Zongliang a Xu, Zhongguang a Zhang, Manhong a Wang, Qin a Liu, Jing a Long, Shibing a Liu, Ming a

a INSTITUTE OF MICROELECTRONICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENGINEERING; BAND GAPS; CHARGE TRAP FLASH MEMORIES; DATA RETENTION; FUTURE DESIGNS; MEMORY DEVICE; MEMORY PERFORMANCE; MEMORY WINDOW; MULTILEVEL CELL; NON-VOLATILE MEMORIES; PERFORMANCE ENHANCEMENTS; PROGRAM/ERASE; TRAPPING LAYERS;

CHARGE TRAPPING; ENERGY GAP; HAFNIUM COMPOUNDS;

FLASH MEMORY;

EID: 78650743422 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3531559 Document Type: Article

Times cited : (85)

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