Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO 2-based RRAM

Scientific Reports

Volumn 3, Issue , 2013, Pages

  Long, Shibing ^a,b   Perniola, Luca ^c   Cagli, Carlo ^c   Buckley, Julien ^c   Lian, Xiaojuan ^b   Miranda, Enrique ^b   Pan, Feng ^d   Liu, Ming ^a   Suñé, Jordi ^b  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c CEA GRENOBLE   (France)

^d TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84886884978     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep02929     Document Type: Article

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