A model for the set statistics of rram inspired in the percolation model of oxide breakdown

IEEE Electron Device Letters

Volumn 34, Issue 8, 2013, Pages 999-1001

  Long, Shibing ^a   Lian, Xiaojuan ^b   Cagli, Carlo ^c   Perniola, Luca ^c   Miranda, Enrique ^b   Liu, Ming ^a   Suñé, Jordi ^b  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c Central Electricity Authority   (France)

Author keywords

Resistive random access memory (RRAM); resistive switching; set voltage statistics

Indexed keywords

OXIDE BREAKDOWN; PERCOLATION MODELS; PHYSICS-BASED MODELS; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY; SET VOLTAGE; WEIBULL MODELS;

NONVOLATILE STORAGE;

PERCOLATION (SOLID STATE);

EID: 84881011161     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2266332     Document Type: Article

References (20)

1. R. Waser, R. Dittmann, G. Staikov, et al., "Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges," Adv. Mater., vol. 21, nos. 25-26, pp. 2632-2663, Jul. 2009.
2. J. J. Yang, D. B. Strukov, and D. R. Stewart, "Memristive devices for computing," Nature Nanotech., vol. 8, pp. 13-24, Jan. 2013.
3. H.-S. P. Wong, H.-Y. Lee, S. Yu, et al., "Metal oxide RRAM," Proc. IEEE, vol. 100, no. 6, pp. 1951-1970, Jun. 2012.
4. S. Yu, X. Guan, and H.-S. P. Wong, "On the switching parameter variation of metal-oxide RRAM-Part II: Model Corroboration and device design strategy," IEEE Trans. Electron Devices, vol. 59, no. 4, pp. 1172-1182, Apr. 2012.
5. S. Long, C. Cagli, D. Ielmini, et al., "Reset statistics of NiO-based resistive switching memories," IEEE Electron Device Lett., vol. 32, no. 11, pp. 1570-1572, Nov. 2011.
6. C. Cagli, J. Buckley, et al., "Experimental and theoretical study of electrode effects in HfO2 based RRAM," in IEDM Tech. Dig., 2011, pp. 658-660.
7. J. Suné, "New physics-based analytic approach to the thin-oxide breakdown statistics," IEEE Electron Device Lett., vol. 22, no. 6, pp. 296-298, Jun. 2001.
8. E. A. Miranda, C. Walczyk, C. Wenger, et al., "Model for the resistive switching effect in HfO2 MIM structures based on the transmission properties of narrow constrictions," IEEE Electron Device Lett., vol. 31, no. 6, pp. 609-611, Jun. 2010.
9. Y. Li, S. Long, H. Lv, et al., "Reset instability in Cu/ZrO2:Cu/Pt RRAM device," IEEE Electron Device Lett., vol. 32, no. 3, pp. 363-365, Mar. 2011.
10. A. Conde, C. Martínez-Domingo, D. Jiménez, et al., "Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomiclayer-deposition," Solid-State Electron., vol. 71, pp. 48-52, May 2012.
11. W.-C. Luo, K.-L. Lin, J.-J. Huang, et al., "Rapid prediction of RRAM RESET-state disturb by ramped voltage stress," IEEE Electron Device Lett., vol. 33, no. 4, pp. 597-599, Apr. 2012.
12. S. Yu, X. Guan, and H.-S. P. Wong, "Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model," Appl. Phys. Lett., vol. 99, no. 6, p. 063507, Aug. 2011.
13. D. Ielmini, C. Cagli, and F. Nardi, "Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories," Nanotechnology, vol. 22, no. 25, p. 254022, May 2011.
14. K.-C. Chang, T.-M. Tsai, T.-C. Chang, et al., "Characteristics and mechanisms of silicon-oxide-based resistance random access memory," IEEE Electron Device Lett., vol. 34, no. 3, pp. 399-402, Mar. 2013.
15. H. Y. Lee, P.-S. Chen, T.-Y. Wu, et al., "HfO2 bipolar resistive memory with robust endurance using AlCu as buffer electrode," IEEE Electron Device Lett., vol. 30, no. 7, pp. 703-705, Jul. 2009.
16. K.-C. Chang, C.-H. Pan, T.-C. Chang, et al., "Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment," IEEE Electron Device Lett., vol. 34, no. 5, pp. 617-619, May 2013.
17. K.-C. Chang, R. Zhang, T.-C. Chang, et al., "Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices," IEEE Electron Device Lett., vol. 34, no. 5, pp. 677-679, May 2013.
18. X. Cartoixà, R. Rurali, and J. Suñé, "Transport properties of oxygen vacancy filaments in metal/crystalline or amorphous HfO2/metal structures," Phys. Rev. B, vol. 86, no. 16, p. 165445, Oct. 2012.
19. A. Kerber, A. Vayshenker, D. Lipp, et al., "Impact of charge trapping on the voltage acceleration of TDDB in metal gate/highk n-channel MOSFETs," in Proc. Int. Rel. Phys. Symp., 2010, pp. 369-372.
20. H. C. Lin, P. D. Yem, and G. D. Wilk, "Leakage current and breakdown electric-field studies on ultrathin atomiclayer-deposited Al2O3 on GaAs," Appl. Phys. Lett., vol. 87, no. 18, p. 182904, Otc. 2005.