Unipolar resistive switching properties of diamondlike carbon-based RRAM devices

IEEE Electron Device Letters

Volumn 32, Issue 6, 2011, Pages 803-805

  Fu, Di ^a   Xie, Dan ^a   Feng, Tingting ^a   Zhang, Chenhui ^a   Niu, Jiebin ^b   Qian, He ^a   Liu, Litian ^a  

^a TSINGHUA UNIVERSITY   (China)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Diamondlike carbon (DLC); resistance random access memory (RRAM); unipolar resistive switching

Indexed keywords

CARBON-BASED; DIAMOND-LIKE; DIAMOND-LIKE CARBON; DIELECTRIC BREAKDOWNS; FILAMENT FORMATION; HIGH-DENSITY; LOW POWER; MATERIAL CANDIDATE; MEMORY PERFORMANCE; NANO SCALE; NON-VOLATILE MEMORY APPLICATION; NONDESTRUCTIVE READOUT; OPERATION VOLTAGE; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; RESISTIVE SWITCHING; SWITCHING POWER; SWITCHING SPEED; THERMAL FUSE; UNIPOLAR SWITCHING;

CARBON FILMS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SWITCHING; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 79957590008     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2132750     Document Type: Article

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