A study of cycling induced degradation mechanisms in Si nanocrystal memory devices

Nanotechnology

Volumn 22, Issue 25, 2011, Pages

  Jiang, Dandan ^a,b   Zhang, Manhong ^a   Huo, Zongliang ^a   Wang, Qin ^a   Liu, Jing ^a   Yu, Zhaoan ^a   Yang, Xiaonan ^a   Wang, Yong ^a   Zhang, Bo ^c   Chen, Junning ^b   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b ANHUI UNIVERSITY   (China)

^c SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE PUMPING; ERASE VOLTAGES; FOWLER-NORDHEIM; INDUCED DEGRADATION; INTERFACE TRAPS; OXIDE CHARGE; PROGRAM AND ERASE; SI NANOCRYSTAL MEMORIES; SUBTHRESHOLD SWING; THRESHOLD VOLTAGE DEGRADATION;

DURABILITY; NANOCRYSTALS; SEMICONDUCTOR STORAGE; THRESHOLD VOLTAGE;

DEGRADATION;

EID: 79956075073     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/25/254009     Document Type: Article

References (19)

1. Tiwari S et al 1996 Appl. Phys. Lett. 68 1377
2. Muralidhar R et al 2003 IEDM Tech Digest p601
3. Saha S et al 2007 IEEE Trans. Electron Devices 54 3049
4. Yater J et al 2009 IEEE Int. Memory Workshop (IMW) p82
5. Monzio Compagnoni C et al 2003 41st IEEE IRPS p506
6. Puzzilli G and Irrera F 2006 IEEE Trans. Electron Devices 53 775
7. Liang M-S et al 1981 IEDM Tech Digest p396
8. Lee K H et al 1993 J. Appl. Phys. 73 4434
9. Lai S K et al 1981 J. Appl. Phys. 52 6231
10. Tsuchiaki M et al 1993 IEEE Trans. Electron Devices 10 1768
11. Chen C and Ma T P 1998 IEEE Trans. Electron Devices 45 512
12. Wang S-Y et al 2010 IEEE IRPS pp10-951
13. Groeseneken G et al 1984 IEEE Trans. Electron Device 31 42
14. Eitan B et al 2000 IEEE Electron Device Lett. 21 543
15. Cho M K and Kim D M 2000 IEEE Electron Device Lett. 21 3999
16. Van den Bosch G et al 2009 IEEE Int. Memory Workshop (IMW) p1
17. Chen W et al 1991 VLSITSA p196
18. McWhorter P J et al 1986 Appl. Phys. Lett. 48 133
19. Wan Y M et al 2005 Mater. Process. Nonvolatile Mem. 830 257-262