SCOPUS 정보 검색 플랫폼

Volumn 96, Issue 26, 2010, Pages

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

(8) Chen, Min Chen a Chang, Ting Chang a,b Tsai, Chih Tsung a Huang, Sheng Yao a Chen, Shih Ching a Hu, Chih Wei c Sze, Simon M c Tsai, Ming Jinn d

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING FILAMENT; ELECTROCHEMICAL REACTIONS; ELECTRODE MATERIAL; INDIUM GALLIUM ZINC OXIDES; MEMORY CELL; MEMORY SWITCHING; NON-VOLATILE MEMORIES; ON-RESISTANCE; RESISTANCE RATIO; RESISTANCE SWITCHING; SWITCHING BEHAVIORS; SWITCHING RESPONSE; TIN ELECTRODES;

GALLIUM; OXIDE FILMS; PLATINUM; SWITCHING; TITANIUM NITRIDE; ZINC; ZINC OXIDE;

ELECTROCHEMICAL ELECTRODES;

EID: 77954321120 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3456379 Document Type: Article

Times cited : (212)

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