Asymmetric carrier conduction mechanism by tip electric field in WSiO X resistance switching device

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 342-344

  Syu, Yong En ^a   Chang, Ting Chang ^a,b   Tsai, Tsung Ming ^a   Chang, Geng Wei ^c   Chang, Kuan Chang ^a   Lou, Jyun Hao ^a   Tai, Ya Hsiang ^c   Tsai, Ming Jinn ^d   Wang, Ying Lang ^e   Sze, Simon M ^a,c,f  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^e TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^f Stanford University   (United States)

Author keywords

Nonvolatile memory; resistance switching; tip electric field; tungsten silicide (WSi)

Indexed keywords

CARRIER CONDUCTION; CURRENT VOLTAGE CURVE; HIGH ELECTRIC FIELDS; HIGH-RESISTANCE STATE; NON-VOLATILE MEMORIES; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; SWITCHING BEHAVIORS; SWITCHING MECHANISM; TUNGSTEN SILICIDE (WSI);

CURVE FITTING; ELECTRIC FIELDS; PLATINUM; RANDOM ACCESS STORAGE; SILICIDES; TUNGSTEN;

SWITCHING;

EID: 84862813023     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2182600     Document Type: Article

References (12)

1. F. M. Yang, F. M. Yang, T. C. Chang, P. T. Liu, P. H. Yeh, Y. C. Yu, J. Y. Lin, S. M. Sze, and J. C. Lou, "Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide," Appl. Phys. Lett., vol. 90, no. 13, p. 132 102, Mar. 2007.
2. S. C. Chen, T. C. Chang, P. T. Liu, Y. C. Wu, P. S. Lin, B. H. Tseng, J. H. Shy, S. M. Sze, C. Y. Chang, and C.-H. Lien, "A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory," IEEE Electron Device Lett., vol. 28, no. 9, pp. 809-811, Sep. 2007.
3. T. C. Chang, F.-Y. Jian, S.-C. Chen, and Y.-T. Tsai, "Developments in nanocrystal memory," Mater. Today, vol. 14, no. 12, pp. 608-615, Dec. 2011.
4. R. Waser and M. Aono, Nat. Mater., vol. 6, no. 11, pp. 833-840, Nov. 2007.
5. L. W. Feng, C.-Y. Chang, Y. F. Chang, W. R. Chen, S.-Y. Wang, P.-W. Chiang, and T.-C. Chang, "A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures," Appl. Phys. Lett., vol. 96, no. 5, p. 052111, Feb. 2010.
6. M. C. Chen, T.-C. Chang, C-T. Tsai, S.-Y. Huang, S.-C. Chen, C.-W. Hu, S. M. Sze, and M.-J. Tsai, "Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films," Appl. Phys. Lett., vol. 96, no. 26, p. 262110, Jun. 2010.
7. C. Yoshida, C. Yoshida, K. Kinoshita, T. Yamasaki, and Y. Sugiyama, "Direct observation of oxygen movement during resistance switching in NiO/Pt film," Appl. Phys. Lett., vol. 93, no. 4, p. 042106, Jul. 2008.
8. D. S. Shang, L. Shi, J. R. Sun, B. G. Shen, F. Zhuge, R. W. Li, and Y. G. Zhao, "Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing," Appl. Phys. Lett., vol. 96, no. 7, p. 072103, Feb. 2010.
9. Y. E. Syu, T. C. Chang, T. M. Tsai, Y. C. Hung, K. C. Chang, M. J. Tsai, M. J. Kao, and S. M. Sze, IEEE Electron Device Lett., vol. 32, no. 4, pp. 545-547, Apr. 2011.
10. A. Sawa, "Resistive switching in transition metal oxides," Mater. Today, vol. 11, no. 6, pp. 28-36, Jun. 2008. (Pubitemid 351680723)
11. P. C. Yang, T.-C. Chang, S. C. Chen, Y. S. Lin, H. C. Huang, and D. S. Gan, "Influence of bias-induced copper diffusion on the resistive switching characteristics of a SiON thin film," Electrochem. Solid-State Lett., vol. 14, no. 2, pp. H93-H95, Dec. 2010.
12. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices. Hoboken, NJ: Wiley, 2007, pp. 227-229.