A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application

Semiconductor Science and Technology

Volumn 25, Issue 5, 2010, Pages

  Liu, Jing ^a   Wang, Qin ^a   Long, Shibing ^a   Zhang, Manhong ^a   Liu, Ming ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE SWEEP; CHARGE LOSS; DATA RETENTION; MEMORY WINDOW; NON-VOLATILE MEMORY APPLICATION; PROGRAM/ERASE;

SILICON COMPOUNDS; ZIRCONIUM ALLOYS;

SILICON;

EID: 77951222961     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/5/055013     Document Type: Article

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