Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-16

  Chang, Kuan Chang ^a   Huang, Jen wei ^b   Chang, Ting Chang ^a,c   Tsai, Tsung Ming ^a   Chen, Kai Huang ^d   Young, Tai Fa ^a   Chen, Jung Hui ^e   Zhang, Rui ^f   Lou, Jen Chung ^f   Huang, Syuan Yong ^a   Pan, Yin Chih ^a   Huang, Hui Chun ^a   Syu, Yong En ^a   Gan, Der Shin ^a   Sze, Simon M ^g  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b DEPARTMENT OF PHYSICS   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d Tung Fang Design Institute   (Taiwan)

^e NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

^f PEKING UNIVERSITY   (China)

^g NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

RRAM; Space charge limited current; Zr

Indexed keywords

BUFFER LAYERS; CARRIER TRANSPORT; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; RRAM; SILICA; THIN FILM CIRCUITS; THIN FILMS; ZIRCONIUM;

CONDUCTION MECHANISM; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; SPACE CHARGE LIMITED CURRENTS; SPACE ELECTRIC FIELDS; SPACE-CHARGE-LIMITED CURRENT;

ZIRCONIUM COMPOUNDS;

EID: 84891398343     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-523     Document Type: Article

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