Characteristics and mechanisms of silicon-oxide-based resistance random access memory

IEEE Electron Device Letters

Volumn 34, Issue 3, 2013, Pages 399-401

  Chang, Kuan Chang ^a   Tsai, Tsung Ming ^a   Chang, Ting Chang ^a,b   Wu, Hsing Hua ^c   Chen, Jung Hui ^d   Syu, Yong En ^a,b   Chang, Geng Wei ^c   Chu, Tian Jian ^a   Liu, Guan Ru ^a,b   Su, Yu Ting ^a,b   Chen, Min Chen ^a,b   Pan, Jhih Hong ^a   Chen, Jian Yu ^a,b   Tung, Cheng Wei ^a   Huang, Hui Chun ^a   Tai, Ya Hsiang ^c   Gan, Der Shin ^a   Sze, Simon M ^a,c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

Author keywords

Filament; resistive switch; silicon oxide; Zn

Indexed keywords

CHARACTERISTICS AND MECHANISMS; CURRENT TRANSPORT MECHANISM; CURRENT VOLTAGE; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; OHM'S LAW; OXIDE MATERIALS; POOLE-FRENKEL BEHAVIOR; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE SWITCHES; RESISTIVE SWITCHING; SEMICONDUCTOR INDUSTRY; ZINC DOPED;

ELECTRIC PROPERTIES; FILAMENTS (LAMP); SEMICONDUCTOR DEVICE MANUFACTURE; SWITCHING SYSTEMS; ZINC;

SILICON OXIDES;

EID: 84874653064     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2241725     Document Type: Article

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