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Volumn 97, Issue 11, 2010, Pages

Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DE-TRAPPING; DE-TRAPPING; EFFECTIVE ENERGY; GATE-BIAS STRESS; LIGHT ILLUMINATION; TRAPPED CHARGE;

GALLIUM; INDIUM; THIN FILM TRANSISTORS; THIN FILMS; ZINC; ZINC OXIDE;

ENHANCED RECOVERY;

EID: 77956811460 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3481676 Document Type: Article

Times cited : (190)

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