Redox reaction switching mechanism in RRAM device with Pt/CoSiO X/TiN structure

IEEE Electron Device Letters

Volumn 32, Issue 4, 2011, Pages 545-547

  Syu, Yong En ^a   Chang, Ting Chang ^a,b   Tsai, Tsung Ming ^a   Hung, Ya Chi ^a   Chang, Kuan Chang ^a   Tsai, Ming Jinn ^c   Kao, Ming Jer ^c   Sze, Simon M ^d  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Cobalt silicon oxide (CoSiOX); nonvolatile memory (NVM); redox reaction; resistance switching

Indexed keywords

CONDUCTIVE FILAMENTS; DIELECTRIC INTERFACE; NONVOLATILE MEMORY (NVM); PHYSICAL MECHANISM; REACTION POTENTIAL; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; SWITCHING ENERGY; SWITCHING MECHANISM; SWITCHING PROCESS; SWITCHING VOLTAGES; TI ELECTRODE;

COBALT; PLATINUM; PULSE GENERATORS; REDOX REACTIONS; SIGNAL GENERATORS; SILICON COMPOUNDS; SILICON OXIDES; SWITCHING; TITANIUM NITRIDE;

RANDOM ACCESS STORAGE;

EID: 79953048048     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2104936     Document Type: Article

References (9)

1. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan, "Volatile and non-volatile memories in silicon with nano-crystal storage," in IEDM Tech. Dig., 1995, pp. 521-524.
2. T. C. Chang, S. T. Yan, P. T. Liu, C. W. Chen, S. H. Lin, and S. M. Sze, "A novel approach of fabricating germanium nanocrystals for nonvolatile memory application," Electrochem. Solid-State Lett., vol. 7, no. 1, pp. G17-G19, 2004.
3. M.-J. Lee, S. I. Kim, C. B. Lee, H. Yin, S.-E. Ahn, B. S. Kang, K. H. Kim, J. C. Park, C. J. Kim, I. Song, S. W. Kim, G. Stefanovich, J. H. Lee, S. J. Chung, Y. H. Kim, and Y. Park, "Low-temperature-grown transition metal oxide based storage materials and oxide transistors for high-density non-volatile memory," Adv. Funct. Mater., vol. 19, no. 10, pp. 1587-1593, May 2009.
4. R. Soni, P. Meuffels, A. Petraru, M. Weides, C. Kügeler, R. Waser, and H. Kohlstedt, "Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise," J. Appl. Phys., vol. 107, no. 2, p. 024517, Jan. 2010.
5. D. Ielmini, C. Cagli, and F. Nardi, "Resistance transition in metal oxides induced by electronic threshold switching," Appl. Phys. Lett., vol. 94, no. 6, p. 063 511, Feb. 2009.
6. S. B. Lee, S. C. Chae, S. H. Chang, J. S. Lee, S. Seo, B. Kahng, and T. W. Noh, "Scaling behaviors of reset voltages and currents in unipolar resistance switching," Appl. Phys. Lett., vol. 93, no. 21, p. 212 105, Nov. 2008.
7. A. Sawa, "Resistive switching in transition metal oxides," Mater. Today, vol. 11, no. 6, pp. 28-36, Jun. 2008. (Pubitemid 351680723)
8. C. Yoshida, K. Kinoshita, T. Yamasaki, and Y. Sugiyama, "Direct observation of oxygen movement during resistance switching in NiO/Pt film," Appl. Phys. Lett., vol. 93, no. 4, p. 042106, Jul. 2008.
9. U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, "Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices," IEEE Trans. Electron Devices, vol. 56, no. 2, pp. 193-200, Feb. 2009.