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Volumn , Issue , 2010, Pages 1-560

Technology of quantum devices

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EID: 84891412625     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/978-1-4419-1056-1     Document Type: Book
Times cited : (76)

References (361)
  • 1
    • 0002905465 scopus 로고
    • Theory of the boundary layer of crystal rectifiers
    • Bethe, H. A., "Theory of the boundary layer of crystal rectifiers", MIT Radiation Laboratory Report 43-12, 1942.
    • (1942) MIT Radiation Laboratory Report , pp. 43-12
    • Bethe, H.A.1
  • 3
    • 0002905465 scopus 로고
    • Theory of the boundary layer of crystal rectifiers
    • Bethe, H. A., "Theory of the boundary layer of crystal rectifiers", MIT Radiation Laboratory Report 43-12, 1942.
    • (1942) MIT Radiation Laboratory Report , pp. 43-12
    • Bethe, H.A.1
  • 8
    • 0032686780 scopus 로고    scopus 로고
    • Uncooled InAs-GaSb Type-II infrared detectors grown on GaAs substrates for the 8-12 μm atmospheric window
    • Mohseni, H., Wojkowski, J., Razeghi, M., Brown, G., and Mitchel, W., IEEE Journal of Quantum Electronics Vol. 35, "Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates for the 8-12 μm atmospheric window", pp. 1041-1044, 1999.
    • (1999) IEEE Journal of Quantum Electronics , vol.35 , pp. 1041-1044
    • Mohseni, H.1    Wojkowski, J.2    Razeghi, M.3    Brown, G.4    Mitchel, W.5
  • 10
    • 0023961549 scopus 로고
    • Ultrafast luminescence spectroscopy using sum frequency generation
    • Shah, J., IEEE Journal of Quantum Electronics Vol. 24, "Ultrafast luminescence spectroscopy using sum frequency generation", pp. 276-288, 1988.
    • (1988) IEEE Journal of Quantum Electronics , vol.24 , pp. 276-288
    • Shah, J.1
  • 14
    • 33750032972 scopus 로고    scopus 로고
    • NBn detector, an infrared detector with reduced dark current and higher operating temperature
    • Maimon, S., and Wicks, G. W., Applied Physics Letters Vol. 89, "nBn detector, an infrared detector with reduced dark current and higher operating temperature", pp. 151109, 2006.
    • (2006) Applied Physics Letters , vol.89 , pp. 151109
    • Maimon, S.1    Wicks, G.W.2
  • 15
    • 26444467120 scopus 로고    scopus 로고
    • Long Wave HgCdTe staring arrays at sofradir: From 9 Mu M to 13+ Mu M cut-offs for high performance applications
    • Manissadjian, A., Tribolet, P., Destefanis, G., and De Borniol, E., Proceedings of the SPIE Vol. 5783, "Long wave HgCdTe staring arrays at Sofradir: from 9 mu m to 13+ mu m cut-offs for high performance applications", pp. 231, 2005.
    • (2005) Proceedings of the SPIE , vol.5783 , pp. 231
    • Manissadjian, A.1    Tribolet, P.2    Destefanis, G.3    Borniol, E.4
  • 18
    • 0034868862 scopus 로고    scopus 로고
    • Highperformance type-II InAs/GaSb superlattice photodiodes
    • Mohseni, H., Wei, Y., and Razeghi, M., Proceedings of the SPIE Vol. 4288, "Highperformance type-II InAs/GaSb superlattice photodiodes", pp. 191, 2001.
    • (2001) Proceedings of the SPIE , vol.4288 , pp. 191
    • Mohseni, H.1    Wei, Y.2    Razeghi, M.3
  • 19
    • 35548998729 scopus 로고    scopus 로고
    • Dark current suppression in type II InAs/GaSb superlattice long wavelength infrared photodiodes with m-structure barrier
    • Nguyen, B. M., Hoffman, D., Delaunay, P. Y., and Razeghi, M., Applied Physics Letters Vol. 91, "Dark current suppression in type II InAs/GaSb superlattice long wavelength infrared photodiodes with M-structure barrier, ", pp. 163511, 2007a.
    • (2007) Applied Physics Letters , vol.91 , pp. 163511
    • Nguyen, B.M.1    Hoffman, D.2    Delaunay, P.Y.3    Razeghi, M.4
  • 20
    • 84891470668 scopus 로고    scopus 로고
    • Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes, "
    • Nguyen, B. M., Razeghi, M., Nathan, V., and Brown, G. J., Proceedings of the SPIE Vol 6479", Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes", pp. 64790S, 2007b.
    • (2007) Proceedings of the SPIE Vol 6479, "
    • Nguyen, B.M.1    Razeghi, M.2    Nathan, V.3    Brown, G.J.4
  • 21
    • 54949117542 scopus 로고    scopus 로고
    • Band edge tunability of M-structure for heterojunction design in sb based type II superlattice photodiodes
    • Nguyen, B. M., Hoffman, D., Delaunay, P. Y., Huang, E. K. W., Razeghi, M., and Pellegrino, J., Applied Physics Letters Vol. 93, "Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes", pp. 163502, 2008.
    • (2008) Applied Physics Letters , vol.93 , pp. 163502
    • Nguyen, B.M.1    Hoffman, D.2    Delaunay, P.Y.3    Huang, E.K.W.4    Razeghi, M.5    Pellegrino, J.6
  • 24
    • 36449004087 scopus 로고
    • Mechanism of suppression of auger recombination processes in type-II heterostructures
    • Zegrya, G. G., and Andreev, A. D., Applied Physics Letters Vol. 67, "Mechanism of suppression of Auger recombination processes in type-II heterostructures", pp. 2681, 1995.
    • (1995) Applied Physics Letters , vol.67 , pp. 2681
    • Zegrya, G.G.1    Andreev, A.D.2
  • 25
    • 0001860827 scopus 로고
    • Metalorganic chemical vapor deposition of III-V semiconductors
    • Ludowise, M., "Metalorganic chemical vapor deposition of III-V semiconductors", Journal of Applied Physics 58, R31-R55, 1985.
    • (1985) Journal of Applied Physics , vol.58
    • Ludowise, M.1
  • 31
    • 11644307955 scopus 로고
    • Role of atomic tellurium in the growth kinetics of CdTe (111) homoepitaxy
    • Cheung, J. T., "Role of atomic tellurium in the growth kinetics of CdTe (111) homoepitaxy", Applied Physics Letters 51(23), pp. 1940-1942, 1987.
    • (1987) Applied Physics Letters , vol.51 , Issue.23 , pp. 1940-1942
    • Cheung, J.T.1
  • 32
    • 0026897424 scopus 로고
    • Silicon incorporation in LEC growth of single crystal gallium arsenide
    • Elliot, A. G., Flat, A., and Vanderwater, D. A., "Silicon incorporation in LEC growth of single crystal gallium arsenide", Journal of Crystal Growth 121(3), pp. 349-359, 1992.
    • (1992) Journal of Crystal Growth , vol.121 , Issue.3 , pp. 349-359
    • Elliot, A.G.1    Flat, A.2    Vanderwater, D.A.3
  • 33
    • 0036129466 scopus 로고    scopus 로고
    • Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats
    • Gao, Y. Z., Kan, H., Gao, F. S., Gong, X. Y., and Yamaguchi, T., "Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats", Journal of Crystal Growth 234(1), pp. 85-90, 2002.
    • (2002) Journal of Crystal Growth , vol.234 , Issue.1 , pp. 85-90
    • Gao, Y.Z.1    Kan, H.2    Gao, F.S.3    Gong, X.Y.4    Yamaguchi, T.5
  • 35
    • 0037296860 scopus 로고    scopus 로고
    • A new liquid-source version of liquid phase electroepitaxy
    • Gevorkyan, V. A., "A new liquid-source version of liquid phase electroepitaxy", Journal of Crystal Growth 249(1-2), pp. 149-158, 2003.
    • (2003) Journal of Crystal Growth , vol.249 , Issue.1-2 , pp. 149-158
    • Gevorkyan, V.A.1
  • 38
    • 0035575411 scopus 로고    scopus 로고
    • MOCVD technology in research, development and mass production
    • Juergensen, H., "MOCVD technology in research, development and mass production", Materials Science in Semiconductor Processing 4(6), pp. 467-474, 2001.
    • (2001) Materials Science in Semiconductor Processing , vol.4 , Issue.6 , pp. 467-474
    • Juergensen, H.1
  • 40
    • 0024104256 scopus 로고
    • Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LP-MOVPE
    • Knauf, J., "Comparison of ethyldimethylindium (EDMIn) and trimethylindium (TMIn) for GaInAs and InP growth by LP-MOVPE", Journal of Crystal Growth 93(1-4), pp. 43-40, 1988.
    • (1988) Journal of Crystal Growth , vol.93 , Issue.1-4 , pp. 43-40
    • Knauf, J.1
  • 41
    • 0030562058 scopus 로고    scopus 로고
    • Growth of long-length 3 inch diameter Fedoped InP single crystals
    • Kohiro, K., Ohta, M., and Oda, O., "Growth of long-length 3 inch diameter Fedoped InP single crystals", Journal of Crystal Growth 158(3), pp. 197-204, 1996.
    • (1996) Journal of Crystal Growth , vol.158 , Issue.3 , pp. 197-204
    • Kohiro, K.1    Ohta, M.2    Oda, O.3
  • 42
    • 0343192039 scopus 로고    scopus 로고
    • The compound semiconductor industry in the 1990s
    • Meyer, M., "The Compound Semiconductor Industry in the 1990s", Compound Semiconductors 5, pp. 9, 1999.
    • (1999) Compound Semiconductors , vol.5 , pp. 9
    • Meyer, M.1
  • 44
    • 0035203310 scopus 로고    scopus 로고
    • Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz)
    • Neubert, M., and Rudolph, P., "Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz)", Progress in Crystal Growth and Characterization of Materials 43(2-3), pp. 119-185, 2001.
    • (2001) Progress in Crystal Growth and Characterization of Materials , vol.43 , Issue.2-3 , pp. 119-185
    • Neubert, M.1    Rudolph, P.2
  • 47
    • 0019286308 scopus 로고
    • Molecular beam epitaxy of gaas and inp with gas sources for as and p
    • Panish, M. B., "Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P", Journal of The Electrochemical Society 127(12), pp. 2729-2733, 1980.
    • (1980) Journal of the Electrochemical Society , vol.127 , Issue.12 , pp. 2729-2733
    • Panish, M.B.1
  • 49
    • 63449099244 scopus 로고    scopus 로고
    • High-power high-wall plug efficiency mid-infrared quantum cascade lasers based on InP/GaInAs/InAlAs material system
    • Razeghi, M., "High-power high-wall plug efficiency mid-infrared quantum cascade lasers based on InP/GaInAs/InAlAs material system", Proceedings of the SPIE 7230, p. 723011, 2009.
    • (2009) Proceedings of the SPIE , vol.7230 , pp. 723011
    • Razeghi, M.1
  • 50
    • 0033514705 scopus 로고    scopus 로고
    • Bulk growth of GaAs An overview
    • Rudolph, P., and Jurisch, M., "Bulk growth of GaAs An overview", Journal of Crystal Growth 198-199 (Part 1), pp. 325-335, 1999.
    • (1999) Journal of Crystal Growth , vol.198-199 , Issue.PART 1 , pp. 325-335
    • Rudolph, P.1    Jurisch, M.2
  • 51
    • 0021411474 scopus 로고
    • Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source
    • Tokumitsu, E., Kudou, Y., Konagai, M., and Takahashi, K., "Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source", Journal of Applied Physics 55(8), pp. 3163-3165, 1984.
    • (1984) Journal of Applied Physics , vol.55 , Issue.8 , pp. 3163-3165
    • Tokumitsu, E.1    Kudou, Y.2    Konagai, M.3    Takahashi, K.4
  • 52
    • 0021623570 scopus 로고
    • Heteroepitaxial ridge-overgrown distributed feedback laser at 1.5 μm
    • Tsang, W. T., Logan, R. A., Olsson, N. A., Johnson, L. F., and Henry, C. H., "Heteroepitaxial ridge-overgrown distributed feedback laser at 1.5 μm", Applied Physics Letters 45(12), pp. 1272-1274, 1984.
    • (1984) Applied Physics Letters , vol.45 , Issue.12 , pp. 1272-1274
    • Tsang, W.T.1    Logan, R.A.2    Olsson, N.A.3    Johnson, L.F.4    Henry, C.H.5
  • 62
    • 84933643121 scopus 로고
    • Solid solubilities of impurity elements in germanium and silicon
    • Trumbore, F. A., "Solid solubilities of impurity elements in germanium and silicon", Bell System Technical Journal 39, pp. 205-233, 1960.
    • (1960) Bell System Technical Journal , vol.39 , pp. 205-233
    • Trumbore, F.A.1
  • 78
    • 0003941908 scopus 로고    scopus 로고
    • SPIE Optical Engineering Press, Bellingham, WA.
    • Levinson, H. J., Principles of Lithography, SPIE Optical Engineering Press, Bellingham, WA., 2001.
    • (2001) Principles of Lithography
    • Levinson, H.J.1
  • 79
    • 0022103912 scopus 로고
    • High sensitivity positive electron resist
    • Mackie, S. and Beaumont, S. P., "High sensitivity positive electron resist", Solid State Technology 28, pp. 117-122, 1985.
    • (1985) Solid State Technology , vol.28 , pp. 117-122
    • Mackie, S.1    Beaumont, S.P.2
  • 94
    • 0025502893 scopus 로고
    • Heavily doped based GaInP/GaAs heterojunction bipolar-transistor grown by chemical beam epitaxy
    • Alexandre, F., Benchimol, J. L., Dangla, J., Dubon-Chevallier, C., and Amarger, V., "Heavily doped based GaInP/GaAs heterojunction bipolar-transistor grown by chemical beam epitaxy", Electronics Letters. 26, pp. 1753-1755, 1990.
    • (1990) Electronics Letters. , vol.26 , pp. 1753-1755
    • Alexandre, F.1    Benchimol, J.L.2    Dangla, J.3    Dubon-Chevallier, C.4    Amarger, V.5
  • 95
    • 0025890908 scopus 로고
    • LPMOCVD growth of C-doped GaAs-layers and AlGaAs/GaAs heterojunction bipolartransistors
    • Ashizawa, Y., Noda, T., Morizuka, K., Asaka, M., and Obara, M., "LPMOCVD growth of C-doped GaAs-layers and AlGaAs/GaAs heterojunction bipolartransistors", Journal of Crystal Growth 107, pp. 903-908, 1991.
    • (1991) Journal of Crystal Growth , vol.107 , pp. 903-908
    • Ashizawa, Y.1    Noda, T.2    Morizuka, K.3    Asaka, M.4    Obara, M.5
  • 99
    • 0024051719 scopus 로고
    • Numerical study of emitter-base junction design for AlGaAs GaAs heterojunction bipolar-transistors
    • Das, A. and Lundstrom, M. S., "Numerical study of emitter-base junction design for AlGaAs GaAs heterojunction bipolar-transistors", IEEE Transactions on Electron Devices 35, pp. 863-870, 1988.
    • (1988) IEEE Transactions on Electron Devices , vol.35 , pp. 863-870
    • Das, A.1    Lundstrom, M.S.2
  • 100
    • 0024715664 scopus 로고
    • High-frequency performance of MOVPE npn AlGaAs/GaAs heterojunction bipolar-transistors
    • Enquist, P. M. and Hutchby, J. A., "High-frequency performance of MOVPE npn AlGaAs/GaAs heterojunction bipolar-transistors", Electronics Letters 25, pp. 1124-1125, 1989.
    • (1989) Electronics Letters , vol.25 , pp. 1124-1125
    • Enquist, P.M.1    Hutchby, J.A.2
  • 102
    • 0023345473 scopus 로고
    • Submicrometer fully self-aligned AlGaAs/GaAs heterojunction bipolar-transistor
    • Hayama, N., Okamoto, A., Madihian, M., and Honjo, K., "Submicrometer fully self-aligned AlGaAs/GaAs heterojunction bipolar-transistor", IEEE Electron Devices Letters 8, pp. 246-248, 1987.
    • (1987) IEEE Electron Devices Letters , vol.8 , pp. 246-248
    • Hayama, N.1    Okamoto, A.2    Madihian, M.3    Honjo, K.4
  • 103
    • 0343001109 scopus 로고
    • Band lineup for a GaInP/GaAs heterojunction measured by high-gain npn heterojunction bipolartransistor grown by metalorganic chemical vapor-deposition
    • Kobayashi, T., Taira, K., Nakamura, F., and Kawai, H., "Band lineup for a GaInP/GaAs heterojunction measured by high-gain npn heterojunction bipolartransistor grown by metalorganic chemical vapor-deposition", Journal of Applied Physics 65, pp. 4898-4902, 1989.
    • (1989) Journal of Applied Physics , vol.65 , pp. 4898-4902
    • Kobayashi, T.1    Taira, K.2    Nakamura, F.3    Kawai, H.4
  • 105
    • 0024104198 scopus 로고
    • Abrupt Mg doping profiles in GaAs grown by metalorganic vapor-phase epitaxy
    • Landgren, G., Rask, M., Anderson, S. G., and Lundberg, A., "Abrupt Mg doping profiles in GaAs grown by metalorganic vapor-phase epitaxy", Journal of Crystal Growth 93, pp. 646-649, 1988.
    • (1988) Journal of Crystal Growth , vol.93 , pp. 646-649
    • Landgren, G.1    Rask, M.2    Anderson, S.G.3    Lundberg, A.4
  • 106
    • 0022045191 scopus 로고
    • Heterojunction bipolar-transistor using a (Ga, In) P emitter on a GaAs base, grown by molecular-beam epitaxy
    • Mondry, M. J. and Kroemer, H., "Heterojunction bipolar-transistor using a (Ga, In) P emitter on a GaAs base, grown by molecular-beam epitaxy", IEEE Electron Device Letters 6, pp. 175-177, 1985.
    • (1985) IEEE Electron Device Letters , vol.6 , pp. 175-177
    • Mondry, M.J.1    Kroemer, H.2
  • 108
    • 0025404191 scopus 로고
    • High-performance GaAs GaInP heterostructure bipolar-transistors grown by low-pressure metalorganic-chemical vapor-deposition
    • Omnes, F., and
    • Razeghi, M., Omnes, F., Defour, M., Maurel, Ph., Hu, J., Wolk, E., and Pavlidis, D., "High-performance GaAs GaInP heterostructure bipolar-transistors grown by low-pressure metalorganic-chemical vapor-deposition", Semiconductor Science and Technology 5, pp. 278-280, 1990.
    • (1990) Semiconductor Science and Technology , vol.5 , pp. 278-280
    • Razeghi, M.1    Defour, M.2    Maurel, Ph.3    Hu, J.4    Wolk, E.5    Pavlidis, D.6
  • 111
    • 0026028409 scopus 로고
    • High-performance carbon-doped base GaAs AlGaAs heterojunction bipolar-transistor grown by MOCVD
    • Twynam, J. K., Sato, H., and Kinosada, T., "High-performance carbon-doped base GaAs AlGaAs heterojunction bipolar-transistor grown by MOCVD", Electronics Letters 27, pp. 141-142, 1991.
    • (1991) Electronics Letters , vol.27 , pp. 141-142
    • Twynam, J.K.1    Sato, H.2    Kinosada, T.3
  • 114
    • 84891452101 scopus 로고    scopus 로고
    • High Temperature Reliability of Aluminum-free 980 nm and 808 nm Laser Diodes
    • J. C. Woo and Y. S. Park, Institute of Physics Publishing, Bristol, UK
    • Diaz, J., Yi, H. J., Kim, S., Wang, L. J., and Razeghi, M., "High Temperature Reliability of Aluminum-free 980 nm and 808 nm Laser Diodes", Compound Semiconductors 1995 (Institute of Physics Conference Series 145), eds. J. C. Woo and Y. S. Park, Institute of Physics Publishing, Bristol, UK, pp. 1041-1046, 1996.
    • (1996) Compound Semiconductors 1995 (Institute of Physics Conference Series 145) , pp. 1041-1046
    • Diaz, J.1    Yi, H.J.2    Kim, S.3    Wang, L.J.4    Razeghi, M.5
  • 115
    • 0000922289 scopus 로고    scopus 로고
    • Long-term reliability of Al-free InGaAsP/GaAs (λ=808 nm) lasers at high-power high-temperature operation
    • Diaz, J., Yi, H. J., and Razeghi, M., "Long-term reliability of Al-free InGaAsP/GaAs (λ=808 nm) lasers at high-power high-temperature operation", Applied Physics Letters 71, pp. 3042-3044, 1997.
    • (1997) Applied Physics Letters , vol.71 , pp. 3042-3044
    • Diaz, J.1    Yi, H.J.2    Razeghi, M.3
  • 119
    • 0020090793 scopus 로고
    • Theory of the linewidth of semiconductor lasers
    • Henry, C. H., "Theory of the Linewidth of Semiconductor Lasers", IEEE Journal of Quantum Electronics 18, pp. 259-264, 1982.
    • (1982) IEEE Journal Of Quantum Electronics , vol.18 , pp. 259-264
    • Henry, C.H.1
  • 122
    • 0015141562 scopus 로고
    • Possibility of the amplification of electromagnetic waves in a semiconductor with a superlattice
    • Kazarinov, R. F. and Suris, R. A., "Possibility of the amplification of electromagnetic waves in a semiconductor with a superlattice", Soviet Physics Semiconductors 5, pp. 707-709, 1971.
    • (1971) Soviet Physics Semiconductors , vol.5 , pp. 707-709
    • Kazarinov, R.F.1    Suris, R.A.2
  • 124
    • 0001220415 scopus 로고
    • Frequency-modulation response of tunable 2-segment distributed feedback lasers
    • Kuznetsov, M., Willner, A. E., Okaminow, I. P., "Frequency- modulation response of tunable 2-segment distributed feedback lasers", Applied Physics Letters 55, pp. 1826-1828, 1989.
    • (1989) Applied Physics Letters , vol.55 , pp. 1826-1828
    • Kuznetsov, M.1    Willner, A.E.2    Okaminow, I.P.3
  • 125
    • 0001607335 scopus 로고    scopus 로고
    • InAsSb InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition
    • Lane, B., Wu, A., Stein, A, Diaz, J., and Razeghi, M., "InAsSb InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition", Applied Physics Letters 74, pp. 3438-3440, 1999.
    • (1999) Applied Physics Letters , vol.74 , pp. 3438-3440
    • Lane, B.1    Wu, A.2    Stein, A.3    Diaz, J.4    Razeghi, M.5
  • 126
    • 0033730098 scopus 로고    scopus 로고
    • High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 μm
    • Lane, B., Tong, S., Diaz, J., Wu, Z., and Razeghi, M., "High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 μm", Material Science and Engineering B 74, pp. 52-55, 2000.
    • (2000) Material Science and Engineering B , vol.74 , pp. 52-55
    • Lane, B.1    Tong, S.2    Diaz, J.3    Wu, Z.4    Razeghi, M.5
  • 128
    • 33847446049 scopus 로고
    • Stimulated optical radiation in ruby
    • Maiman, T. H., "Stimulated Optical Radiation in Ruby", Nature 187, pp. 493-494, 1960.
    • (1960) Nature , vol.187 , pp. 493-494
    • Maiman, T.H.1
  • 130
    • 0031559813 scopus 로고    scopus 로고
    • Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range
    • Mohseni, H., Michel, E., Sandven, J., Razeghi, M., Mitchel, W., and Brown, G., "Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range", Applied Physics Letters 71, pp. 1403-1405, 1997.
    • (1997) Applied Physics Letters , vol.71 , pp. 1403-1405
    • Mohseni, H.1    Michel, E.2    Sandven, J.3    Razeghi, M.4    Mitchel, W.5    Brown, G.6
  • 131
    • 9144245707 scopus 로고    scopus 로고
    • Demonstration of a silicon Raman laser
    • Boyraz, O. and Jalali, B., "Demonstration of a silicon Raman laser", Optics Express 12, pp. 5269-5273, 2004.
    • (2004) Optics Express , vol.12 , pp. 5269-5273
    • Boyraz, O.1    Jalali, B.2
  • 132
    • 0020764120 scopus 로고
    • Aging test of MOCVD shallow proton stripe GaInAsP-InP, DH Laser Diode Emitting at 1.5 μm
    • Razeghi, M., Hirtz, P., Blondeau, R., and Duchemin, J. P., "Aging Test of MOCVD Shallow Proton Stripe GaInAsP-InP, DH Laser Diode Emitting at 1.5 μm", Electronics Letters 19, p. 481, 1983a.
    • (1983) Electronics Letters , vol.19 , pp. 481
    • Razeghi, M.1    Hirtz, P.2    Blondeau, R.3    Duchemin, J.P.4
  • 137
    • 0001131007 scopus 로고
    • CW phase-locked array GaInAsP-InP high power semiconductor laser grown by low-pressure metalorganic chemical vapor deposition
    • Razeghi, M., "CW Phase-Locked Array GaInAsP-InP High Power Semiconductor Laser Grown by Low-Pressure Metalorganic Chemical Vapor Deposition", Applied Physics Letters 50, p. 230, 1987.
    • (1987) Applied Physics Letters , vol.50 , pp. 230
    • Razeghi, M.1
  • 138
    • 0028452753 scopus 로고
    • High-power laser diodes based on InGaAsP alloys
    • Razeghi, M., "High-power laser diodes based on InGaAsP alloys", Nature 369, pp. 631-633, 1994.
    • (1994) Nature , vol.369 , pp. 631-633
    • Razeghi, M.1
  • 139
    • 84891390609 scopus 로고    scopus 로고
    • High power InAsSb/InAsSbP laser diodes emitting in the 3-5 μm Range
    • Physical Sciences Directorate
    • Razeghi, M., "High Power InAsSb/InAsSbP Laser Diodes Emitting in the 3-5 μm Range", in 1998 Army Research Office Highlights, Physical Sciences Directorate, 1998.
    • (1998) 1998 Army Research office Highlights
    • Razeghi, M.1
  • 140
    • 0002948581 scopus 로고    scopus 로고
    • Recent achievement in MIR high power injection laser diodes (λ=3 to 5 μm)
    • Razeghi, M., Wu, D., Lane, B., Rybaltowski, A., Stein, A., Diaz, J., and Yi, H., "Recent achievement in MIR high power injection laser diodes (λ=3 to 5 μm)", LEOS Newsletter 13, pp. 7-10, 1999.
    • (1999) LEOS Newsletter , vol.13 , pp. 7-10
    • Razeghi, M.1    Wu, D.2    Lane, B.3    Rybaltowski, A.4    Stein, A.5    Diaz, J.6    Yi, H.7
  • 144
    • 33646593249 scopus 로고
    • InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition
    • Sai-Halasz, G. A., Esaki, L., and Harrison, W. A., "InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition", Physical Review B 18, pp. 2812-2818, 1978b.
    • (1978) Physical Review B , vol.18 , pp. 2812-2818
    • Sai-Halasz, G.A.1    Esaki, L.2    Harrison, W.A.3
  • 149
    • 0347329165 scopus 로고    scopus 로고
    • Recent advances in quantum dot optoelectronic devices and future trends
    • H. S. Nalwa, Academic Press, London
    • Kim, S. and Razeghi, M., "Recent advances in quantum dot optoelectronic devices and future trends", in Handbook of Advanced Electronic and Photonic Materials and Devices, ed. H. S. Nalwa, Academic Press, London, pp. 133-154, 2001.
    • (2001) Handbook of Advanced Electronic and Photonic Materials and Devices , pp. 133-154
    • Kim, S.1    Razeghi, M.2
  • 151
    • 0031559813 scopus 로고    scopus 로고
    • Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range
    • Mohseni, H., Michel, E., Sandven, J., Razeghi, M., Mitchel, W., and Brown, G., "Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range", Applied Physics Letters 71, pp. 1403-1405, 1997.
    • (1997) Applied Physics Letters , vol.71 , pp. 1403-1405
    • Mohseni, H.1    Michel, E.2    Sandven, J.3    Razeghi, M.4    Mitchel, W.5    Brown, G.6
  • 155
    • 0034313047 scopus 로고    scopus 로고
    • Optoelectronic devices based on III-V compound semiconductors which have made a major scientific and technological impact in the past 20 years
    • Razeghi, M., "Optoelectronic Devices Based on III-V Compound Semiconductors Which Have Made a Major Scientific and Technological Impact in the Past 20 Years", IEEE Journal of Selected Topics in Quantum Electronics, 2000.
    • (2000) IEEE Journal of Selected Topics in Quantum Electronics
    • Razeghi, M.1
  • 156
    • 0002948581 scopus 로고    scopus 로고
    • Recent achievements in MIR high power injection laser diodes (λ = 3 to 5 μm)
    • Razeghi, M., Wu, D., Lane, B., Rybaltowski, A., Stein, A., Diaz, J., and Yi, H., "Recent achievements in MIR high power injection laser diodes (λ = 3 to 5 μm)", LEOS Newsletter 13, pp. 7-10, 1999.
    • (1999) LEOS Newsletter , vol.13 , pp. 7-10
    • Razeghi, M.1    Wu, D.2    Lane, B.3    Rybaltowski, A.4    Stein, A.5    Diaz, J.6    Yi, H.7
  • 157
    • 0032631242 scopus 로고    scopus 로고
    • Kinetics of quantum states in quantum cascade lasers: Device design principles and fabrication
    • Razeghi, M., "Kinetics of Quantum States in Quantum Cascade Lasers: Device Design Principles and Fabrication", Microelectronics Journal 30, pp. 1019-1029, 1999.
    • (1999) Microelectronics Journal , vol.30 , pp. 1019-1029
    • Razeghi, M.1
  • 159
    • 0003434416 scopus 로고
    • University Science Book, Mill Valley, Calif.
    • Siegman, A. E., Lasers, University Science Book, Mill Valley, Calif., 1986.
    • (1986) Lasers
    • Siegman, A.E.1
  • 160
    • 0004242249 scopus 로고    scopus 로고
    • Cambridge University Press, New York
    • Silfvast, W. T., Laser Fundamentals, Cambridge University Press, New York, 1996.
    • (1996) Laser Fundamentals
    • Silfvast, W.T.1
  • 164
    • 40849127029 scopus 로고    scopus 로고
    • Room temperature continuous wave operation of quantum cascade lasers with watt-level optical power
    • Bai, Y., Darvish, S. R., Slivken, S., Zhang, W., Evans, A., Nguyen, J., and Razeghi, M., "Room temperature continuous wave operation of quantum cascade lasers with watt-level optical power", Applied Physics Letters 92, p. 101105, 2008a.
    • (2008) Applied Physics Letters , vol.92 , pp. 101105
    • Bai, Y.1    Darvish, S.R.2    Slivken, S.3    Zhang, W.4    Evans, A.5    Nguyen, J.6    Razeghi, M.7
  • 165
    • 40849127029 scopus 로고    scopus 로고
    • Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency
    • Bai, Y., Slivken, S., Darvish, S. R., and Razeghi, M., "Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency", Applied Physics Letters 93, p. 021103, 2008b.
    • (2008) Applied Physics Letters , vol.93 , pp. 021103
    • Bai, Y.1    Slivken, S.2    Darvish, S.R.3    Razeghi, M.4
  • 167
    • 33646860541 scopus 로고    scopus 로고
    • Roomtemperature, high-power, and continuous-wave operation of distributedfeedback quantum-cascade lasers at lambda similar to 9.6 μm
    • Darvish, S. R., Slivken, S., Evans, A., Yu, J. S., and Razeghi, M., "Roomtemperature, high-power, and continuous-wave operation of distributedfeedback quantum-cascade lasers at lambda similar to 9.6 μm", Applied Physics Letters 88, p. 201114, 2006a.
    • (2006) Applied Physics Letters , vol.88 , pp. 201114
    • Darvish, S.R.1    Slivken, S.2    Evans, A.3    Yu, J.S.4    Razeghi, M.5
  • 168
    • 33845934672 scopus 로고    scopus 로고
    • Highpower, continuous-wave operation of distributed-feedback quantum-cascade lasers at lambda similar to 7.8 μm
    • Darvish, S. R., Zhang, W., Evans, A., Yu, J. S., Slivken, S., and Razeghi, M., "Highpower, continuous-wave operation of distributed-feedback quantum-cascade lasers at lambda similar to 7.8 μm", Applied Physics Letters 89, p. 251119, 2006b.
    • (2006) Applied Physics Letters , vol.89 , pp. 251119
    • Darvish, S.R.1    Zhang, W.2    Evans, A.3    Yu, J.S.4    Slivken, S.5    Razeghi, M.6
  • 169
    • 7044239262 scopus 로고    scopus 로고
    • Continuous-wave operation of λ ∼ 4.8 μm quantum-cascade lasers at room temperature
    • Evans, A., Yu, J. S., Slivken, S., and Razeghi, M., "Continuous-wave operation of λ ∼ 4.8 μm quantum-cascade lasers at room temperature", Applied Physics Letters 85, pp. 2166-2168, 2004.
    • (2004) Applied Physics Letters , vol.85 , pp. 2166-2168
    • Evans, A.1    Yu, J.S.2    Slivken, S.3    Razeghi, M.4
  • 172
    • 0015141562 scopus 로고
    • Possibility of amplication of electromagnetic waves in a semiconductor with a superlattice
    • Kazarinov, R. F. and Suris, R. A., "Possibility of Amplication of Electromagnetic Waves in a Semiconductor with a Superlattice", Soviet Physics Semiconductors-Ussr 5, p. 707, 1971.
    • (1971) Soviet Physics Semiconductors-Ussr , vol.5 , pp. 707
    • Kazarinov, R.F.1    Suris, R.A.2
  • 174
    • 33748693346 scopus 로고    scopus 로고
    • Optical coatings by ion-beam sputtering deposition for long-wave infrared quantum cascade lasers
    • Nguyen, J., Yu, J. S., Evans, A., Slivken, S., and Razeghi, M., "Optical coatings by ion-beam sputtering deposition for long-wave infrared quantum cascade lasers", Applied Physics Letters 89, p. 111113, 2006.
    • (2006) Applied Physics Letters , vol.89 , pp. 111113
    • Nguyen, J.1    Yu, J.S.2    Evans, A.3    Slivken, S.4    Razeghi, M.5
  • 175
    • 21844478503 scopus 로고    scopus 로고
    • High power CW quantum cascade lasers: How short can we go?
    • Razeghi, M., Evans, A., Slivken, S., and Yu, J. S., "High power CW quantum cascade lasers: How short can we go?", Proceedings of SPIE 5738, pp. 1-12, 2005.
    • (2005) Proceedings of SPIE , vol.5738 , pp. 1-12
    • Razeghi, M.1    Evans, A.2    Slivken, S.3    Yu, J.S.4
  • 176
    • 34247255384 scopus 로고    scopus 로고
    • High-power, continuousoperation intersubband laser for wavelengths greater than 10 μm
    • Slivken, S., Evans, A., Zhang, W., and Razeghi, M., "High-power, continuousoperation intersubband laser for wavelengths greater than 10 μm", Applied Physics Letters 90, p. 151115, 2007.
    • (2007) Applied Physics Letters , vol.90 , pp. 151115
    • Slivken, S.1    Evans, A.2    Zhang, W.3    Razeghi, M.4
  • 178
    • 0001276335 scopus 로고    scopus 로고
    • Intrawell and interwell intersubband transitions in multiple quantum wells for far-infrared sources
    • Smet, J. H., Fonstad, C. G., and Hu, Q., "Intrawell and interwell intersubband transitions in multiple quantum wells for far-infrared sources", Journal of Applied Physics 79, pp. 9305-9320, 1996.
    • (1996) Journal of Applied Physics , vol.79 , pp. 9305-9320
    • Smet, J.H.1    Fonstad, C.G.2    Hu, Q.3
  • 179
    • 0036609945 scopus 로고    scopus 로고
    • Photonic-crystal distributed-feedback quantum cascade lasers
    • Vurgaftman, I. and Meyer, J. R., "Photonic-crystal distributed-feedback quantum cascade lasers", IEEE Journal of Quantum Electronics 38, pp. 592-602, 2002.
    • (2002) IEEE Journal of Quantum Electronics , vol.38 , pp. 592-602
    • Vurgaftman, I.1    Meyer, J.R.2
  • 180
    • 23744516101 scopus 로고    scopus 로고
    • Highpower, room-temperature, and continuous-wave operation of distributedfeedback quantum-cascade lasers at lambda similar to 4.8 μm
    • Yu, J. S., Slivken, S., Darvish, S. R., Evans, A., Gokden, B., and Razeghi, M., "Highpower, room-temperature, and continuous-wave operation of distributedfeedback quantum-cascade lasers at lambda similar to 4.8 μm", Applied Physics Letters 87, p. 041104, 2005.
    • (2005) Applied Physics Letters , vol.87 , pp. 041104
    • Yu, J.S.1    Slivken, S.2    Darvish, S.R.3    Evans, A.4    Gokden, B.5    Razeghi, M.6
  • 181
    • 33745474310 scopus 로고    scopus 로고
    • Temperature dependent characteristics of λ ∼ 3.8 μm room-temperature continuous-wave quantum-cascade lasers
    • Yu, J. S., Evans, A., Slivken, S., Darvish, S. R., and Razeghi, M., "Temperature dependent characteristics of λ ∼ 3.8 μm room-temperature continuous-wave quantum-cascade lasers", Applied Physics Letters 88, p. 251118, 2006.
    • (2006) Applied Physics Letters , vol.88 , pp. 251118
    • Yu, J.S.1    Evans, A.2    Slivken, S.3    Darvish, S.R.4    Razeghi, M.5
  • 188
    • 0034313047 scopus 로고    scopus 로고
    • Optoelectronic devices based on III-V compound semiconductors which have made a major scientific and technological impact in the past 20 years
    • Razeghi, M., "Optoelectronic Devices Based on III-V Compound Semiconductors Which Have Made a Major Scientific and Technological Impact in the Past 20 Years", IEEE Journal of Selected Topics in Quantum Electronics, 2000.
    • (2000) IEEE Journal of Selected Topics in Quantum Electronics
    • Razeghi, M.1
  • 189
    • 0032631242 scopus 로고    scopus 로고
    • Kinetics of quantum states in quantum cascade lasers: Device design principles and fabrication
    • Razeghi, M., "Kinetics of Quantum States in Quantum Cascade Lasers: Device Design Principles and Fabrication", Microelectronics Journal 30, pp. 1019-1029, 1999.
    • (1999) Microelectronics Journal , vol.30 , pp. 1019-1029
    • Razeghi, M.1
  • 190
    • 0003434416 scopus 로고
    • University Science Book, Mill Valley, Calif.
    • Siegman, A. E., Lasers, University Science Book, Mill Valley, Calif., 1986.
    • (1986) Lasers
    • Siegman, A.E.1
  • 191
    • 0004242249 scopus 로고    scopus 로고
    • Cambridge University Press, New York
    • Silfvast, W. T., Laser Fundamentals, Cambridge University Press, New York, 1996.
    • (1996) Laser Fundamentals
    • Silfvast, W.T.1
  • 194
    • 36149025974 scopus 로고
    • Thermal agitation of electricity in conductors
    • Johnson, J. B., "Thermal agitation of electricity in conductors", Physical Review 32, pp. 97-109, 1928.
    • (1928) Physical Review , vol.32 , pp. 97-109
    • Johnson, J.B.1
  • 196
    • 0141635377 scopus 로고
    • On generation-recombination noise in infrared detector materials
    • Long, D., "On generation-recombination noise in infrared detector materials", Infrared Physics 7, pp. 169-170, 1967.
    • (1967) Infrared Physics , vol.7 , pp. 169-170
    • Long, D.1
  • 198
    • 9644276948 scopus 로고    scopus 로고
    • Preparation of 128 element of IR detector array based on vanadium oxide thin films obtained by ion beam sputtering
    • Wang, S. B., Xiong, B. F., Zhou, S. B., Huang, G., Chen, S. H., Yi, X. J., "Preparation of 128 element of IR detector array based on vanadium oxide thin films obtained by ion beam sputtering", Sensors and Actuators A 117, pp. 110-114, 2005.
    • (2005) Sensors and Actuators A , vol.117 , pp. 110-114
    • Wang, S.B.1    Xiong, B.F.2    Zhou, S.B.3    Huang, G.4    Chen, S.H.5    Yi, X.J.6
  • 202
    • 20844442627 scopus 로고    scopus 로고
    • Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature
    • Bhattacharya, P., Su, X. H., Chakrabarti, S., Ariyawansa, G., Perera, A. G. U., "Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature", Applied Physics Letters 86, pp. 191106-1, 2005.
    • (2005) Applied Physics Letters , vol.86 , pp. 191106-1
    • Bhattacharya, P.1    Su, X.H.2    Chakrabarti, S.3    Ariyawansa, G.4    Perera, A.G.U.5
  • 204
    • 0032224411 scopus 로고    scopus 로고
    • Growth and characterization of InAs/GaSb type II superlattices for long wavelength infrared detectors
    • Mohseni, H., Michel, E. J., Razeghi, M., Mitchel, W. C., and Brown, G. J., "Growth and characterization of InAs/GaSb type II superlattices for long wavelength infrared detectors", Proceedings of the SPIE 3287, pp. 30-37, 1998.
    • (1998) Proceedings of the SPIE , vol.3287 , pp. 30-37
    • Mohseni, H.1    Michel, E.J.2    Razeghi, M.3    Mitchel, W.C.4    Brown, G.J.5
  • 205
    • 26444460229 scopus 로고    scopus 로고
    • High performance Type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays
    • Razeghi, M., Wei, Y., Gin, A., Hood, A., Yazdanpanah, V., Tidrow, M. Z., and Nathan, V., "High performance Type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays", Proceedings of the SPIE 5783, pp. 86-97, 2005.
    • (2005) Proceedings of the SPIE , vol.5783 , pp. 86-97
    • Razeghi, M.1    Wei, Y.2    Gin, A.3    Hood, A.4    Yazdanpanah, V.5    Tidrow, M.Z.6    Nathan, V.7
  • 206
    • 79955999111 scopus 로고    scopus 로고
    • Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications
    • Wei, Y., Gin, A., Razeghi, M., Brown, G. J., "Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications", Applied Physics Letters 80, pp. 3262-3264, 2002.
    • (2002) Applied Physics Letters , vol.80 , pp. 3262-3264
    • Wei, Y.1    Gin, A.2    Razeghi, M.3    Brown, G.J.4
  • 210
    • 0003984062 scopus 로고    scopus 로고
    • Second Edition, SPIE Optical Engineering Press, Bellingham, WA
    • Holst, G. C., CCD Arrays, Cameras and Displays, Second Edition, SPIE Optical Engineering Press, Bellingham, WA, 1998.
    • (1998) CCD Arrays, Cameras and Displays
    • Holst, G.C.1
  • 212
    • 0004147567 scopus 로고
    • SPIE Optical Engineering Press Bellingham, Washington
    • Rogalski, A., Infrared Photon Detectors, SPIE Optical Engineering Press Bellingham, Washington, 1995.
    • (1995) Infrared Photon Detectors
    • Rogalski, A.1
  • 216
    • 43249097510 scopus 로고    scopus 로고
    • High-performance focal plane array based on type-II InAs/GaSb superlattice heterostructures
    • Delaunay, P.-Y., and Razeghi, M., "High-performance focal plane array based on type-II InAs/GaSb superlattice heterostructures", Proceedings of the SPIE 6900, pp. 69000M-69010, 2008.
    • (2008) Proceedings of the SPIE , vol.6900
    • Delaunay, P.-Y.1    Razeghi, M.2
  • 223
    • 0031559813 scopus 로고    scopus 로고
    • Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range
    • Mohseni, H., Michel, E., Sandoen, J., Razeghi, M., Mitchel, W., and Brown, G., "Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range", Applied Physics Letters 71(10), pp. 1403-1405, 1997.
    • (1997) Applied Physics Letters , vol.71 , Issue.10 , pp. 1403-1405
    • Mohseni, H.1    Michel, E.2    Sandoen, J.3    Razeghi, M.4    Mitchel, W.5    Brown, G.6
  • 224
    • 35548998729 scopus 로고    scopus 로고
    • Dark current suppression in type II InAs/GaSb superlattice long wavelength infrared photodiodes with M-structure barrier
    • Nguyen, B. M., Hoffman, D., Delaunay, P.-Y., and Razeghi, M., "Dark current suppression in type II InAs/GaSb superlattice long wavelength infrared photodiodes with M-structure barrier", Applied Physics Letters 91(16), pp. 163511-163513, 2007.
    • (2007) Applied Physics Letters , vol.91 , Issue.16 , pp. 163511-163513
    • Nguyen, B.M.1    Hoffman, D.2    Delaunay, P.-Y.3    Razeghi, M.4
  • 225
    • 34250728056 scopus 로고    scopus 로고
    • Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm
    • Nguyen, B. M., Hoffman, D., Wei, Y., Delaunay, P.-Y., Hood, A., and Razeghi, M., "Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm", Applied Physics Letters 90(23), pp. 231108-231103, 2007.
    • (2007) Applied Physics Letters , vol.90 , Issue.23 , pp. 231108-231103
    • Nguyen, B.M.1    Hoffman, D.2    Wei, Y.3    Delaunay, P.-Y.4    Hood, A.5    Razeghi, M.6
  • 226
    • 53149103907 scopus 로고    scopus 로고
    • Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K
    • Nguyen, B. M., Hoffman, D., Huang, E. K.-W., Delaunay, P.-Y., and Razeghi, M., "Background Limited Long wavelength infrared Type-II InAs/GaSb Superlattice Photodiodes operating at 110 K", Applied Physics Letters 93, pp. 123502-1, 2008.
    • (2008) Applied Physics Letters , vol.93 , pp. 123502-1
    • Nguyen, B.M.1    Hoffman, D.2    Huang, E.K.-W.3    Delaunay, P.-Y.4    Razeghi, M.5
  • 227
    • 34248647904 scopus 로고    scopus 로고
    • Type-II M structure photodiodes: An alternative material design for mid-wave to long wavelength infrared regimes
    • Nguyen, B. M., Razeghi, M., Nathan, V., and Brown, G. J., "Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes", Proceedings of the SPIE 6479, pp. 64790S-64710, 2007.
    • (2007) Proceedings of the SPIE , vol.6479
    • Nguyen, B.M.1    Razeghi, M.2    Nathan, V.3    Brown, G.J.4
  • 228
    • 34248666734 scopus 로고    scopus 로고
    • Techniques for high quality SiO2 films
    • Nguyen, J., and Razeghi, M., "Techniques for high quality SiO2 films", Proceedings of the SPIE 6479, pp. 64791K-64798K, 2007.
    • (2007) Proceedings of the SPIE , vol.6479
    • Nguyen, J.1    Razeghi, M.2
  • 232
    • 36549095407 scopus 로고
    • Proposal for strained Type II superlattice infrared detectors
    • Smith, D. L., and Mailhiot, C., "Proposal for strained Type II superlattice infrared detectors", Journal of Applied Physics 62(6), pp. 2545-2548, 1987.
    • (1987) Journal of Applied Physics , vol.62 , Issue.6 , pp. 2545-2548
    • Smith, D.L.1    Mailhiot, C.2
  • 233
    • 4143107390 scopus 로고
    • Effects of quantum states on the photocurrent in a 'superlattice'
    • Tsu, R., Chang, L. L., Sai-Halasz, G. A., and Esaki, L., "Effects of Quantum States on the Photocurrent in a 'Superlattice'", Physical Review Letters 34(24), pp. 1509, 1974.
    • (1974) Physical Review Letters , vol.34 , Issue.24 , pp. 1509
    • Tsu, R.1    Chang, L.L.2    Sai-Halasz, G.A.3    Esaki, L.4
  • 235
    • 18444379715 scopus 로고
    • Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors
    • Walther, M., Schmitz, J., Rehm, R., Kopta, S., Fuchs, F., Fleibner, J., Cabanski, W., Ziegler, J., "Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors", Journal of Crystal Growth 278(1-4), pp. 156-161, 1995.
    • (1995) Journal of Crystal Growth , vol.278 , Issue.1-4 , pp. 156-161
    • Walther, M.1    Schmitz, J.2    Rehm, R.3    Kopta, S.4    Fuchs, F.5    Fleibner, J.6    Cabanski, W.7    Ziegler, J.8
  • 236
    • 35648943802 scopus 로고    scopus 로고
    • InAs/GaSb type-II short-period superlattices for advanced single and dual-color focal plane arrays
    • Walther, M., Rehm, R., Fleissner, J., Schmitz, J., Ziegler, J., Cabanski, W., and Breiter, R., "InAs/GaSb type-II short-period superlattices for advanced single and dual-color focal plane arrays", Proceedings of the SPIE 6542, pp. 654206-654208, 2007.
    • (2007) Proceedings of the SPIE , vol.6542 , pp. 654206-654208
    • Walther, M.1    Rehm, R.2    Fleissner, J.3    Schmitz, J.4    Ziegler, J.5    Cabanski, W.6    Breiter, R.7
  • 237
    • 1842459330 scopus 로고    scopus 로고
    • Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering
    • Wei, Y., and Razeghi, M., "Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering", Physical Review B (Condensed Matter and Materials Physics) 69(8), pp. 085316-085317, 2004.
    • (2004) Physical Review B (Condensed Matter and Materials Physics) , vol.69 , Issue.8 , pp. 085316-085317
    • Wei, Y.1    Razeghi, M.2
  • 242
    • 20844442627 scopus 로고    scopus 로고
    • Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature
    • Bhattacharya, P., Su, X. H. and Chakrabarti, S., "Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature", Applied Physics Letters 86, pp. 191106-1, 2005.
    • (2005) Applied Physics Letters , vol.86 , pp. 191106-1
    • Bhattacharya, P.1    Su, X.H.2    Chakrabarti, S.3
  • 245
    • 21544477864 scopus 로고
    • Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices
    • Goldstein, L., Glas, F., Marzin, J. Y., Charasse, M. N. and Roux, G. L., "Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices", Applied Physics Letters 47, pp. 1099-1101, 1985.
    • (1985) Applied Physics Letters , vol.47 , pp. 1099-1101
    • Goldstein, L.1    Glas, F.2    Marzin, J.Y.3    Charasse, M.N.4    Roux, G.L.5
  • 249
    • 34047166409 scopus 로고    scopus 로고
    • High-performance InAs quantumdot infrared photodetectors grown on InP substrate operating at room temperature
    • 2007
    • Lim, H., Tsao, S., Zhang, W. and Razeghi, M., "High-performance InAs quantumdot infrared photodetectors grown on InP substrate operating at room temperature", Applied Physics Letters 90, pp. 131112-1, 2007.
    • Applied Physics Letters , vol.90 , pp. 131112-1
    • Lim, H.1    Tsao, S.2    Zhang, W.3    Razeghi, M.4
  • 250
    • 34547670418 scopus 로고    scopus 로고
    • Temperature-independent photoresponsivity and high-temperature (190 K) operation of a quantum dot infrared photodetector
    • Lu, X., Vaillancourt, J. and Meisner, M. J., "Temperature- independent photoresponsivity and high-temperature (190 K) operation of a quantum dot infrared photodetector", Applied Physics Letters 91, pp. 051115-1, 2007.
    • (2007) Applied Physics Letters , vol.91 , pp. 051115-1
    • Lu, X.1    Vaillancourt, J.2    Meisner, M.J.3
  • 251
    • 49749093850 scopus 로고    scopus 로고
    • Assessment of quantum dot infrared photodetectors for high temperature operation
    • Martyniuk, P., Krishna, S. and Rogalski, A., "Assessment of quantum dot infrared photodetectors for high temperature operation", Journal of Applied Physics 104, pp. 034314-1, 2008.
    • (2008) Journal of Applied Physics , vol.104 , pp. 034314-1
    • Martyniuk, P.1    Krishna, S.2    Rogalski, A.3
  • 252
    • 56449130553 scopus 로고    scopus 로고
    • Quantum-dot infrared photodetectors: Status and outlook
    • Martyniuk, P. and Rogalski, A., "Quantum-dot infrared photodetectors: Status and outlook", Progress in Quantum Electronics 32, pp. 89-120, 2008.
    • (2008) Progress in Quantum Electronics , vol.32 , pp. 89-120
    • Martyniuk, P.1    Rogalski, A.2
  • 253
    • 0036536221 scopus 로고    scopus 로고
    • Evaluation of the fundamental properties of quantum dot infrared detectors
    • Phillips, J., "Evaluation of the fundamental properties of quantum dot infrared detectors", Journal of Applied Physics 91, 4590-4594, 2002.
    • (2002) Journal of Applied Physics , vol.91 , pp. 4590-4594
    • Phillips, J.1
  • 254
    • 0030143645 scopus 로고    scopus 로고
    • The theory of quantum-dot infrared phototransistors
    • Ryzhii, V., "The theory of quantum-dot infrared phototransistors", Semiconductor Science and Technology 11, pp. 759-765, 1996.
    • (1996) Semiconductor Science and Technology , vol.11 , pp. 759-765
    • Ryzhii, V.1
  • 256
    • 44649139820 scopus 로고    scopus 로고
    • InP-based quantum-dot infrared photodetectors with high quantum efficiency and high-temperature imaging
    • Tsao, S., Lim, H., Seo, H., Zhang, W. and Razeghi, M., "InP-Based Quantum-Dot Infrared Photodetectors With High Quantum Efficiency and High-Temperature Imaging", IEEE Sensors Journal 8, pp. 936-941, 2008.
    • (2008) IEEE Sensors Journal , vol.8 , pp. 936-941
    • Tsao, S.1    Lim, H.2    Seo, H.3    Zhang, W.4    Razeghi, M.5
  • 260
    • 56449130553 scopus 로고    scopus 로고
    • Quantum-dot infrared photodetectors: Status and outlook
    • Martyniuk, P. and Rogalski, A., "Quantum-dot infrared photodetectors: Status and outlook", Progress in Quantum Electronics 32, pp. 89-120, 2008.
    • (2008) Progress in Quantum Electronics , vol.32 , pp. 89-120
    • Martyniuk, P.1    Rogalski, A.2
  • 262
    • 36249009599 scopus 로고    scopus 로고
    • Ultraviolet single photon detection with Geiger-mode 4H-SiC avalanche photodiodes
    • Bai, X., McIntosh, D., Liu, H. and Campbell, J. C., "Ultraviolet single photon detection with Geiger-mode 4H-SiC avalanche photodiodes", IEEE Photonic Technology Letters 19, pp. 1822-1824, 2007.
    • (2007) IEEE Photonic Technology Letters , vol.19 , pp. 1822-1824
    • Bai, X.1    McIntosh, D.2    Liu, H.3    Campbell, J.C.4
  • 263
    • 0001376374 scopus 로고
    • Distribution functions and ionization rates for hot electrons in semiconductors
    • Baraff, G. A., "Distribution functions and ionization rates for hot electrons in semiconductors", Physical Review 128, pp. 2507-2517, 1962.
    • (1962) Physical Review , vol.128 , pp. 2507-2517
    • Baraff, G.A.1
  • 265
    • 0000092841 scopus 로고
    • Photon emission from avalanche breakdown in silicon
    • Chynoweth, A. G. and McKay, K. G., "Photon emission from avalanche breakdown in silicon", Physical Review 102, pp. 369-376, 1956.
    • (1956) Physical Review , vol.102 , pp. 369-376
    • Chynoweth, A.G.1    McKay, K.G.2
  • 266
    • 0030121167 scopus 로고    scopus 로고
    • Avalanche photodiodes and quenching circuits for single-photon detection
    • Cova, S., Ghioni, M., Lacaita, A., Samori, C. and Zappa, F., "Avalanche photodiodes and quenching circuits for single-photon detection", Applied Optics 35, pp. 1956-1976, 1996.
    • (1996) Applied Optics , vol.35 , pp. 1956-1976
    • Cova, S.1    Ghioni, M.2    Lacaita, A.3    Samori, C.4    Zappa, F.5
  • 268
    • 0029357198 scopus 로고
    • Large-area avalanche photodiodes for the detection of soft x-rays
    • Gullikson E. M., Gramsch E. and Szawlowski M., "Large-area avalanche photodiodes for the detection of soft x-rays", Applied Optics 34, pp. 4662-4668, 1995.
    • (1995) Applied Optics , vol.34 , pp. 4662-4668
    • Gullikson, E.M.1    Gramsch, E.2    Szawlowski, M.3
  • 270
  • 272
    • 84922644221 scopus 로고
    • Multiplication noise in uniform avalanche diodes
    • McIntyre, R. J., "Multiplication noise in uniform avalanche diodes", IEEE Transactions on Electron Devices ED-13, pp. 164-168, 1966.
    • (1966) IEEE Transactions on Electron Devices , vol.ED-13 , pp. 164-168
    • McIntyre, R.J.1
  • 274
    • 0000459441 scopus 로고
    • A new silicon avalanche photodiode photon counting detector for astronomy
    • Nightingale, N. S., "A new silicon avalanche photodiode photon counting detector for astronomy", Exploratory Astronomy 1, pp. 407-422, 1991.
    • (1991) Exploratory Astronomy , vol.1 , pp. 407-422
    • Nightingale, N.S.1
  • 276
    • 0642358028 scopus 로고
    • Problems related top-n junctions in silicon
    • Shockley, W., "Problems related top-n junctions in silicon", Czechosolvak Journal of Physics B11, pp. 81-121, 1961.
    • (1961) Czechosolvak Journal of Physics , vol.B11 , pp. 81-121
    • Shockley, W.1
  • 278
    • 36149024459 scopus 로고
    • Theory of electron multiplication in silicon and germanium
    • Wolff, P. A., "Theory of Electron Multiplication in Silicon and Germanium", Physical Review 95, pp. 1415-1420, 1954.
    • (1954) Physical Review , vol.95 , pp. 1415-1420
    • Wolff, P.A.1
  • 279
    • 0030121167 scopus 로고    scopus 로고
    • Avalanche photodiodes and quenching circuits for single-photon detection
    • Cova, S., Ghioni, M., Lacaita, A., Samori, C. and Zappa, F., "Avalanche photodiodes and quenching circuits for single-photon detection", Applied Optics 35, pp. 1956-1976, 1996.
    • (1996) Applied Optics , vol.35 , pp. 1956-1976
    • Cova, S.1    Ghioni, M.2    Lacaita, A.3    Samori, C.4    Zappa, F.5
  • 288
    • 2142750222 scopus 로고    scopus 로고
    • Electron-longitudinal optical phonon interaction between Landau levels in semiconductor heterostructures
    • Becker, C., Vasanelli, A., Sirtori, C., and Bastard, G., "Electron-longitudinal optical phonon interaction between Landau levels in semiconductor heterostructures", Physics Review B 69, pp. 115328-1 (2004)
    • (2004) Physics Review B , vol.69 , pp. 115328-1
    • Becker, C.1    Vasanelli, A.2    Sirtori, C.3    Bastard, G.4
  • 289
    • 44349116688 scopus 로고    scopus 로고
    • Room temperature terahertz quantum cascade laser source based on intracavity difference-frequency generation
    • Belkin, M. A., Capasso, F., Xie, F., Belyanin, A., Fischer, M., Wittmann, A., and Faist, J., "Room temperature terahertz quantum cascade laser source based on intracavity difference-frequency generation", Applied Physics Letters 92, pp. 201101-1, 2008.
    • (2008) Applied Physics Letters , vol.92 , pp. 201101-1
    • Belkin, M.A.1    Capasso, F.2    Xie, F.3    Belyanin, A.4    Fischer, M.5    Wittmann, A.6    Faist, J.7
  • 293
    • 0037783410 scopus 로고    scopus 로고
    • High duty cycle and continuous terahertz emission from germanium
    • Bründermann, E., Chanberlin, D. R., and Haller, E. E., "High duty cycle and continuous terahertz emission from germanium", Applied Physics Letters 76, pp. 2991, 2000.
    • (2000) Applied Physics Letters , vol.76 , pp. 2991
    • Bründermann, E.1    Chanberlin, D.R.2    Haller, E.E.3
  • 294
    • 0346586798 scopus 로고    scopus 로고
    • Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices
    • Bykhovski, A. D., Gelmont, B. L. and M. S. Shur. "Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices", Journal of Applied Phycis 81, pp. 6332, 1997.
    • (1997) Journal of Applied Phycis , vol.81 , pp. 6332
    • Bykhovski, A.D.1    Gelmont, B.L.2    Shur, M.S.3
  • 295
    • 40349092322 scopus 로고    scopus 로고
    • Brainstorming their way to an imaging revolution
    • Clery, D., "Brainstorming Their Way to an Imaging Revolution", Science 297, pp. 5582, 2002.
    • (2002) Science , vol.297 , pp. 5582
    • Clery, D.1
  • 297
    • 0000863188 scopus 로고
    • Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current
    • Dyakonov, M. and Shur, M. S. "Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current", Physics Review Letters 71, pp. 2465, 1993.
    • (1993) Physics Review Letters , vol.71 , pp. 2465
    • Dyakonov, M.1    Shur, M.S.2
  • 300
    • 0009498685 scopus 로고
    • Resonances in the hopping probability between flexible quantum dots: The case of superlattices under parallel electric and magnetic fields
    • Ferreira, R., "Resonances in the hopping probability between flexible quantum dots: The case of superlattices under parallel electric and magnetic fields", Physics Review B 43, pp. 9336, 1991.
    • (1991) Physics Review B , vol.43 , pp. 9336
    • Ferreira, R.1
  • 301
    • 18444398074 scopus 로고    scopus 로고
    • Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption
    • Friel, I., Driscoll, K., Kulenica, E., Dutta, M., Paiella, R., and Moustakas, T., "Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption", Journal of Crystal Growth 278, pp. 387, 2005.
    • (2005) Journal of Crystal Growth , vol.278 , pp. 387
    • Friel, I.1    Driscoll, K.2    Kulenica, E.3    Dutta, M.4    Paiella, R.5    Moustakas, T.6
  • 302
    • 0000706158 scopus 로고    scopus 로고
    • Intersubband absorption at λ ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
    • Gmachl, C., Ng, H. S., Chu, N. G., and Cho, A. Y. "Intersubband absorption at λ ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers", Applied Physics Letters 77, 3722 (2000).
    • (2000) Applied Physics Letters , vol.77 , pp. 3722
    • Gmachl, C.1    Ng, H.S.2    Chu, N.G.3    Cho, A.Y.4
  • 303
    • 33644697345 scopus 로고    scopus 로고
    • All-solid-state, narrow linewidth, wavelength-agile terahertz-wave generator
    • Guo, R., Akiyama, K., Minamide, H., and Ito, H., "All-solid-state, narrow linewidth, wavelength-agile terahertz-wave generator", Applied Physics Letters 88, pp. 091120-1, 2006.
    • (2006) Applied Physics Letters , vol.88 , pp. 091120-1
    • Guo, R.1    Akiyama, K.2    Minamide, H.3    Ito, H.4
  • 306
    • 33846432373 scopus 로고    scopus 로고
    • GaN/AlGaN active regions for terahertz quantum cascade lasers grown by low-pressure metal organic vapor deposition
    • Huang, G. S., Lu, T. C., Yao, H. H., Kuo, H. C., Wang, S. C., Sun, G., Lin, C., Chang, L., Soref, R. A., "GaN/AlGaN active regions for terahertz quantum cascade lasers grown by low-pressure metal organic vapor deposition", Journal of Crystal Growth 298, pp. 687, 2007.
    • (2007) Journal of Crystal Growth , vol.298 , pp. 687
    • Huang, G.S.1    Lu, T.C.2    Yao, H.H.3    Kuo, H.C.4    Wang, S.C.5    Sun, G.6    Lin, C.7    Chang, L.8    Soref, R.A.9
  • 308
    • 0000556985 scopus 로고    scopus 로고
    • Ultrafast intersubband relaxation (<=150 fs) in AlGaN/GaN multiple quantum wells
    • Iizuka, N., Kaneko, K., Suzuki, N., Asano, T., Noda, S., and Wada, O., "Ultrafast intersubband relaxation (<=150 fs) in AlGaN/GaN multiple quantum wells", Applied Physics Letters 77, pp. 648, 2000.
    • (2000) Applied Physics Letters , vol.77 , pp. 648
    • Iizuka, N.1    Kaneko, K.2    Suzuki, N.3    Asano, T.4    Noda, S.5    Wada, O.6
  • 309
  • 310
    • 2442568505 scopus 로고    scopus 로고
    • Simulation and design of GaN/AlGaN far-infrared (λ ∼34 μm) quantum-cascade laser
    • Jovanović, V. D., Indjin, D., Ikonić, Z., and Harrison, P., "Simulation and design of GaN/AlGaN far-infrared (λ ∼34 μm) quantum-cascade laser", Applied Physics Letters 84, pp. 2995, 2004.
    • (2004) Applied Physics Letters , vol.84 , pp. 2995
    • Jovanović, V.D.1    Indjin, D.2    Ikonić, Z.3    Harrison, P.4
  • 319
    • 64149103432 scopus 로고    scopus 로고
    • 186 K operation of terahertz-quantum cascade lasers based on diagonal design
    • Kumar, S., Hu, Q., and Reno, J. L., "186 K operation of terahertz-quantum cascade lasers based on diagonal design", Applied Physics Letters, 94 pp. 131105, 2009.
    • (2009) Applied Physics Letters , vol.94 , pp. 131105
    • Kumar, S.1    Hu, Q.2    Reno, J.L.3
  • 323
    • 33947581241 scopus 로고    scopus 로고
    • Short wavelength (λ =2.13 μm) intersubband luminescence from GaN/AlN quantum wells at room temperature
    • Nevou, L., Tchernycheva, M., Julien, F. H., Guillot, F., and Monroy, E., "Short wavelength (λ =2.13 μm) intersubband luminescence from GaN/AlN quantum wells at room temperature", Applied Physics Letters 90, pp. 121106-1, 2007.
    • (2007) Applied Physics Letters , vol.90 , pp. 121106-1
    • Nevou, L.1    Tchernycheva, M.2    Julien, F.H.3    Guillot, F.4    Monroy, E.5
  • 330
    • 37149024735 scopus 로고    scopus 로고
    • The effect of structural disorder on guided resonances in photonic crystal slabs studied with terahertz time-domain spectroscopy
    • Prasad, T., Colvin, V. L., and Mittleman, D. M., "The effect of structural disorder on guided resonances in photonic crystal slabs studied with terahertz time-domain spectroscopy", Optics Express 15, pp. 16954-1, 2007.
    • (2007) Optics Express , vol.15 , pp. 16954-16951
    • Prasad, T.1    Colvin, V.L.2    Mittleman, D.M.3
  • 334
    • 42749102725 scopus 로고    scopus 로고
    • Terahertz emission from quantum cascade lasers in the quantum hall regime: Evidence for many body resonances and localization effects
    • 2004
    • Scalari, G., Blaser, S., Faist, J., Beere, H., Linfield, E., Ritchie, D., and Davies, G., "Terahertz Emission from Quantum Cascade Lasers in the Quantum Hall Regime: Evidence for Many Body Resonances and Localization Effects", Physics Review Letters 93, pp. 237403, 2004.
    • Physics Review Letters , vol.93 , pp. 237403
    • Scalari, G.1    Blaser, S.2    Faist, J.3    Beere, H.4    Linfield, E.5    Ritchie, D.6    Davies, G.7
  • 335
    • 33646671734 scopus 로고    scopus 로고
    • Electrically switchable, two-color quantum cascade laser emitting at 1.39 and 2.3 THz
    • Scalari, G., Walther, C., Faist, J., Beere, H., and Ritchie, D., "Electrically switchable, two-color quantum cascade laser emitting at 1.39 and 2.3 THz", Applied Physics Letters 88, pp. 141102-1, 2006.
    • (2006) Applied Physics Letters , vol.88 , pp. 141102-1
    • Scalari, G.1    Walther, C.2    Faist, J.3    Beere, H.4    Ritchie, D.5
  • 337
    • 0037103597 scopus 로고    scopus 로고
    • Efficient, tunable, and coherent 0.18-5.27-THz source based on GaSe crystal
    • 2002
    • Shi, W., Ding, Y. J., Fernelius, N., and Vodopyanov, K., "Efficient, tunable, and coherent 0.18-5.27-THz source based on GaSe crystal", Optics Letters 27, pp. 1454, 2002
    • Optics Letters , vol.27 , pp. 1454
    • Shi, W.1    Ding, Y.J.2    Fernelius, N.3    Vodopyanov, K.4
  • 343
    • 0038082017 scopus 로고    scopus 로고
    • Calculation of near-infrared intersubband absorption spectra in GaN/aln quantum wells
    • Suzuki, N., Iizuka, N., and Kaneko, K., "Calculation of Near-Infrared Intersubband Absorption Spectra in GaN/AlN Quantum Wells", Japaneese Journal of Applied Physics 42, pp. 132, 2002.
    • (2002) Japaneese Journal of Applied Physics , vol.42 , pp. 132
    • Suzuki, N.1    Iizuka, N.2    Kaneko, K.3
  • 347
    • 17944381347 scopus 로고    scopus 로고
    • Measurement of subband electronic temperatures and population inversion in THz quantum-cascade lasers
    • Vitiello, M. S., Scamarcio, G., Spagnolo, V., Williams, B., Kumar, S., Hu, Q., and Reno, J., "Measurement of subband electronic temperatures and population inversion in THz quantum-cascade lasers", Applied Physics Letters 86, pp. 111115-1, 2005.
    • (2005) Applied Physics Letters , vol.86 , pp. 111115-1
    • Vitiello, M.S.1    Scamarcio, G.2    Spagnolo, V.3    Williams, B.4    Kumar, S.5    Hu, Q.6    Reno, J.7
  • 350
    • 0038044868 scopus 로고    scopus 로고
    • Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy
    • Waki, I., Kumtornkittikul, C., Shimogaki, Y., and Nakano, Y., "Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy", Applied Physics Letters 82, pp. 4465, 2003
    • (2003) Applied Physics Letters , vol.82 , pp. 4465
    • Waki, I.1    Kumtornkittikul, C.2    Shimogaki, Y.3    Nakano, Y.4
  • 351
    • 2542427573 scopus 로고    scopus 로고
    • Erratum: "Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy" [Appl. Phys. Lett. 82, 4465 (2003) ]
    • Waki, I., Kumtornkittikul, C., Shimogaki, Y., and Nakano, Y., "Erratum: "Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy" [Appl. Phys. Lett. 82, 4465 (2003) ]", Applied Physics Letters 84, pp. 3703, 2003.
    • (2003) Applied Physics Letters , vol.84 , pp. 3703
    • Waki, I.1    Kumtornkittikul, C.2    Shimogaki, Y.3    Nakano, Y.4
  • 352
    • 0037450208 scopus 로고    scopus 로고
    • 3.4-THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation
    • Williams, B. S., Callebaut, H., Kumar, S., Hu, Q., and Reno, J. L., "3.4-THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation", Applied Physics Letters 82, pp. 1015, 2003.
    • (2003) Applied Physics Letters , vol.82 , pp. 1015
    • Williams, B.S.1    Callebaut, H.2    Kumar, S.3    Hu, Q.4    Reno, J.L.5
  • 354
    • 0142087617 scopus 로고    scopus 로고
    • Terahertz quantum-cascade laser at λ ∼ 100 μm using metal waveguide for mode confinement
    • Williams, B. S., Kumar, S., Callebaut, H., Hu, Q., and Reno, J. L., "Terahertz quantum-cascade laser at λ ∼ 100 μm using metal waveguide for mode confinement", Applied Physics Letters 83, pp. 2124, 2003.
    • (2003) Applied Physics Letters , vol.83 , pp. 2124
    • Williams, B.S.1    Kumar, S.2    Callebaut, H.3    Hu, Q.4    Reno, J.L.5
  • 355
    • 34548424447 scopus 로고    scopus 로고
    • Terahertz quantum-cascade lasers
    • Williams, B. S., "Terahertz quantum-cascade lasers", Nature photonics 1, pp. 517, 2007.
    • (2007) Nature Photonics , vol.1 , pp. 517
    • Williams, B.S.1
  • 361
    • 41949111902 scopus 로고    scopus 로고
    • Resonant-phonon terahertz quantum-cascade lasers and video-rate terahertz imaging
    • Kumar, S., and Lee, A. W. M., "Resonant-Phonon Terahertz Quantum-Cascade Lasers and Video-Rate Terahertz Imaging", IEEE Journal of Selected Topics in Quantum Electronics 14, pp. 333, 2008.
    • (2008) IEEE Journal of Selected Topics in Quantum Electronics , vol.14 , pp. 333
    • Kumar, S.1    Lee, A.W.M.2


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