Terahertz emission of SiGe/Si quantum wells

Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 237-239

  Kagan, M S ^a   Altukhov, I V ^a   Sinis, V P ^a   Thomas, S G ^b   Wang, K L ^b   Chao, K A ^c   Yassievich, I N ^d  

^a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c LUND UNIVERSITY   (Sweden)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

SILICON GERMANIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034505614     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01530-3     Document Type: Article

References (5)

1. Altukhov I.V., Kagan M.S., Korolev K.A., Sinis V.P., Smirnov F.A. Sov. Phys. JETP. 74:1992;404.
2. Odnoblyudov M.A., Chistyakov V.M., Yassievich I.N., Kagan M.S. Phys. Status Solidi (b). 210:1998;873.
3. Altukhov I.V., Kagan M.S., Korolev K.A., Sinis V.P., Chirkova E.G., Odnoblyudov M.A., Yassievich I.N. Sov. Phys. JETP. 88:1999;51.
4. Odnoblyudov M.A., Yassievich I.N., Kagan M.S., Galperin Y.M., Chao K.A. Phys. Rev. Lett. 83:1999;644.
5. I.V. Altukhov, M.S. Kagan, V.P. Sinis, S.G. Thomas, K.L. Wang, A. Blom, M.O. Odnoblyudov, Thin Solid Films (in press).