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Volumn 37, Issue 6, 2005, Pages 373-379

Time-resolved photocarrier decay for mid-infrared semiconductors with excitation correlation

Author keywords

Excitation correlation; Mid infrared; Photoluminescence; Recombination; Superlattice

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRON ENERGY LEVELS; ENERGY GAP; INFRARED RADIATION; PHOTOLUMINESCENCE; QUANTUM THEORY;

EID: 18544377489     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.12.005     Document Type: Article
Times cited : (1)

References (11)
  • 7
    • 0030574950 scopus 로고    scopus 로고
    • S.W. McCahon, S.A. Anson, D.-J. Jang, M.E. Flatté, T.F. Boggess, D.H. Chow, T.C. Hasenberg, and C.H. Grein Appl. Phys. Lett. 68 1996 2135 The values for recombination coefficients given in this paper were updated in a subsequent analysis of the experimental data and published in a final report for the U.S. Air Force contract number PL-TR-97-1026. The updated values are: A = 0.2 ns - 1, B = 0, and C = 4 × 1 0 - 27 cm 6 / s.
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 2135
    • McCahon, S.W.1    Anson, S.A.2    Jang, D.-J.3    Flatté, M.E.4    Boggess, T.F.5    Chow, D.H.6    Hasenberg, T.C.7    Grein, C.H.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.