Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats

Journal of Crystal Growth

Volumn 234, Issue 1, 2002, Pages 85-90

  Gao, Yu Zhu ^a   Kan, Hirofumi ^b   Gao, Feng Sheng ^c   Gong, Xiu Ying ^b   Yamaguchi, Tomuo ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b CENTRAL RESEARCH LABORATORY   (Japan)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Purification; A1. X ray diffraction; A3. Melt epitaxy; B1. Narrow gap materials; B2. Semiconducting III V materials

Indexed keywords

ELECTRON MOBILITY; EPITAXIAL GROWTH; FUSED SILICA; PURIFICATION; X RAY DIFFRACTION ANALYSIS;

MELT EPITAXY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0036129466     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01658-X     Document Type: Article

References (7)