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Q. Hu, B. S. Williams, S. Kumar, H. Callebaut, S. Kohen, and J. L. Reno (unpublished)
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15
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17944382636
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note
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0.15Gao.85 active region grown by molecular-beam epitaxy on a semi-insulating GaAs substrate. The samples were processed into metal-metal waveguide structures using either Cu-Cu (Sample a), or In-Au (Samples b and c) wafer bonding techniques. Ridge waveguides were defined using photolithography and reactive ion etching. Sample a was 40 μm wide and 0.72 mm long, Sample b was 80 μm wide and 0.82 mm long, and Sample c was 100 μm wide and 1.09 mm long.
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16
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0142087617
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B. S. Williams, S. Kumar, H. Callebaut, Q. Hu, and J. L. Reno, Appl. Phys. Lett. 83, 2124 (2003).
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Reno, J.L.5
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17944365192
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note
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+ laser was focused to a 2.5 μm spot onto the laser front facet.
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18
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0035831785
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V. Spagnolo, M. Troccoli, G. Scamarcio, C. Gmachl, F. Capasso, A. Tredicucci, A. M. Sergent, A. L. Hutchinson, D. L. Sivco, and A. Y. Cho, Appl. Phys. Lett. 78, 2095 (2001).
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Capasso, F.5
Tredicucci, A.6
Sergent, A.M.7
Hutchinson, A.L.8
Sivco, D.L.9
Cho, A.Y.10
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19
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10744225275
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V. Spagnolo, G. Scamarcio, D. Marano, M. Troccoli, F. Capasso, C. Gmachl, A. M. Sergent, A. L. Hutchinson, D. L. Sivco, A. Y. Cho, H. Page, C. Becker, and C. Sirtori, IEE Proc. J. Optoelectron. 150, 298 (2003).
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Spagnolo, V.1
Scamarcio, G.2
Marano, D.3
Troccoli, M.4
Capasso, F.5
Gmachl, C.6
Sergent, A.M.7
Hutchinson, A.L.8
Sivco, D.L.9
Cho, A.Y.10
Page, H.11
Becker, C.12
Sirtori, C.13
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20
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17944371341
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note
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-3. These limits have been calculated using the values 1-2 ns and 5-7 μm for the carrier lifetime and the diffusion length, respectively.
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21
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17944371136
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note
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2)=0.4-0.5) in the whole range of investigated powers and thus demonstrates that the electron-LO phonon interaction efficiently depletes the subband 7=3.
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22
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17944373868
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note
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The thermal resistance of Devices b and c are A=18.6 K/W and R = 18.0 K/W. These values are 2.5-3.5 times larger than in mid-lR QCLs, due to the thicker active layers used for THz QCLs.
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23
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0042769383
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H. Callebaut, S. Kumar, B. S. Williams, Q. Hu, and J. L. Reno, Appl. Phys. Lett. 83, 207 (2003).
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Appl. Phys. Lett.
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Callebaut, H.1
Kumar, S.2
Williams, B.S.3
Hu, Q.4
Reno, J.L.5
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