Electrical and optical properties of infrared photodiodes using the InAs/Ga1-xInxSb superlattice in heterojunctions with GaSb

Journal of Applied Physics

Volumn 80, Issue 2, 1996, Pages 1116-1127

  Johnson, J L ^a   Samoska, L A ^a   Gossard, A C ^a   Merz, J L ^b   Jack, M D ^c   Chapman, G R ^c   Baumgratz, B A ^c   Kosai, K ^c   Johnson, S M ^c  

^a University of California   (United States)

^b University of Notre Dame   (United States)

^c Santa Barbara Research Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000009009     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362849     Document Type: Article

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