Crystal growth by a modified vapor pressure-controlled Czochralski (VCz) technique

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 2120-2125

  Neubert, M ^a   Rudolph, P ^a   Frank Rotsch, Ch ^a   Czupalla, M ^a   Trompa, K ^a   Pietsch, M ^a   Jurisch, M ^b   Eichler, St ^b   Weinert, B ^b   Scheffer Czygan, M ^b  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

Author keywords

A2. Vapor pressure controlled Czochralski; B1. GaAs

Indexed keywords

COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); ENCAPSULATION; OPTIMIZATION; PROBABILITY; SEMICONDUCTING GALLIUM ARSENIDE; VAPOR PRESSURE;

CARBON CONCENTRATION; CONVEX GROWTH INTERFACES; VAPOR PRESSURE-CONTROLLED CZOCHRALSKI;

CRYSTAL GROWTH FROM MELT;

EID: 41449091907     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.045     Document Type: Article

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