High performance Type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5783, Issue PART I, 2005, Pages 86-87

  Razeghi, M ^a   Wei, Y ^a   Gin, A ^a   Hood, A ^a   Yazdanpanah, V ^a   Tidrow, M Z ^b   Nathan, V ^c  

^a Northwestern University   (United States)

^b ARMED FORCES INSTITUTE OF PATHOLOGY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Focal plane array; GaSb; InAs; Infrared; LWIR; MWIR; Photodiode; Superlattice; Type II; VLWIR

Indexed keywords

FOCAL PLANE ARRAYS; INAS; LWIR; MWIR; TYPE II; VLWIR;

ARRAYS; ATOMIC FORCE MICROSCOPY; INFRARED RADIATION; PHOTODIODES; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES;

INFRARED DETECTORS;

EID: 26444460229     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.605291     Document Type: Conference Paper

References (26)

1. G.A. Sai-Halasz, R. Tsu, and L. Esaki, "A new semiconductor superlattice", Appl. Phys. Lett. 30, 651, 1971.
2. xSb superlattice infrared photodiodes", Appl. Phys. Lett. 71(22), 3251-3253, 1997.
3. H. Mohseni, M. Razeghi, G.J. Brown, Y.S. Park, "High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range", Appl. Phys. Lett. 78(15), 2107-2109, 2001.
4. Y. Wei, A. Gin, M. Razeghi and G. J. Brown, "Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications", Appl. Phys. Lett. 80(18), 3262-3264, 2002.
5. Yajun Wei, Aaron Gin, and Manijeh Razeghi, Gail J Brown, "Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm", Appl. Phys. Lett. 81(19), 3675-3677, 2002.
6. J.R. Meyer, C.A. Huffman, F.J. Bartoli, L.R. Ram-Mohan, "Type-II quantum-well lasers for the mid-wavelength infrared", Appl. Phys. Lett. 67(6), 757-759, 1995.
7. R.Q. Yang, "Mid-infrared interband cascade lasers based on type-II heterostructures", Microelectronics Journal, 30(10), 1043-1056, 1999.
8. H. Xie, and W.I. Wang, "Infrared electroabsorption modulation at normal incidence in asymmetrically stepped AlSb/InAs/GaSb/AlSb quantum wells", J. Appl. Phys. 76(1), 92-96, 1994.
9. Yajun Wei, Manijeh Razeghi, "Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering", Phys. Rev. B, 69, 085316-(1-7), 2004.
10. Yajun Wei, Manijeh Razeghi, Gail J. Brown, Meimei Z. Tidrow, "Modeling type-II InAs/GaSb superlattices using empirical tight-binding method: new aspects", Proc. SPIE, 5359, 301-308, 2004.
11. Manijeh Razeghi, Yajun Wei, Aaron Gin, Gail J. Brown, Daniel K. Johnstone, "Type-II InAs/GaSb superlattices and detectors with λ >18 μm", Proc. SPIE, 4650, 111-116, 2002.
12. J. Schmitz, J. Wagner, F. Fuchs, N. Herres, P. Koidl, J.D. Ralston, "Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy", J. Cryst. Growth, 150, 858, 1995.
13. P.S. Dutta, K.S. Sangunni, H.L. Bhat, Vikram Kumar, "Sulphur passivation of gallium antimonide surfaces", Appl. Phys. Lett. 65(13), 1695, 1994.
14. X.Y. Gong, T. Yamaguchi, H. Kan, T. Makino, K. Ohshimo, M. Aoyama, M. Kumagawa, N.L. Rowell, R. Rinfret, "Sulphur passivation of InAs(Sb)", Appl. Surf. Sci. 113/114, 388, 1997.
15. A.P. Ongstad, R. Kaspi, and C.E. Moeller; M.L. Tilton, D.M. Gianardi, J.R. Chavez; G. C. Dente, "Spectral blueshift and improved luminescence properties with increasing GaSb layer thickness in InAs/GaSb type-II superlattices", J. Appl. Phys. 89(4), 2185, 2001.
16. M. Razeghi, MOCVD Challenge, Volume I, Institute of Physics Pub., 1995.
17. C.L. Canedy, W.W. Bewley, C.S. Kim, M. Kim, I. Vurgaftman, and J.R. Meyer, "Dependence of Type-II "W" Mid-Infrared Photoluminescence and Lasing Properties on Growth Conditions", J. Appl. Phys. 94, 1347, 2003.
18. A. Gin, Y. Wei, A. Hood, A. Bajowala, V. Yazdanpanah, and M. Razeghi, M. Tidrow, "Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes", Appl. Phys. Lett. 84(12), 2037, 2004.
19. Manijeh Razeghi, Yajun Wei, Junjik Bae, Aaron Gin, Andrew Hood, Jutao Jiang, Jongbum Nah, "Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs", Proceedings of SPIE, 5246, 501-511, 2003.
20. W. Cabanski, K. Eberhardt, W. Rode, C.J. Wendler, J. Ziegler, J. Fleißner, F. Fuchs, R. Rehm, J. Schmitz, H. Schneider, M. Walther, Proceedings of SPIE, "Third-generation focal plane array IR detection modules and applications", 5406, 184-192 2004.
21. xTe", J. Vac. Sci. Technol. A 7(2), 271 1989.
22. Hooman Mohseni, Joseph S. Wojkowski, Abbes Tahraoui, Manijeh Razeghi, G. Brown, and W. Mitchel, "Growth and characterization of type-II nonequilibrium photovoltaic detectors for long-wavelength infrared range", Proc. SPIE, 3948, 153-160, 2000.
23. xSb superlattice in heterojunctions with GaSb", J. Appl. Phys. 80, 1116, 1996.
24. xSb infrared superlattice photodiodes for infrared detection", Proc. SPIE 3287, 14, 1998.
25. G. Bastard, "Theoretical investigations of superlattice band structure in the envelope-function approximation", Phys. Rev. B 25, 7584, 1982.
26. L. Burkle, F. Fuchs, R. Kiefer, W. Pletschen, R.E. Sah, J. Schmitz, "Electrical characterization of InAs/(GaIn)Sb infrared superlattice photodiodes for the 8 to 12 μm range", Mater. Res. Soc. Symp. Proc. 607, 77, 2000.