Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates for the 8-12-μm atmospheric window

IEEE Journal of Quantum Electronics

Volumn 35, Issue 7, 1999, Pages 1041-1044

  Mohseni, H ^a   Wojkowski, J ^a   Razeghi, M ^a   Brown, G ^b   Mitchel, W ^b  

^a Northwestern University   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SENSITIVITY ANALYSIS; SUBSTRATES;

PHOTOCONDUCTIVE DETECTORS;

INFRARED DETECTORS;

EID: 0032686780     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.772173     Document Type: Article

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