In situ metrology advances in MOCVD growth of GaN-based materials

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 94-99

  Belousov, M ^a   Volf, B ^a   Ramer, J C ^a   Armour, E A ^a   Gurary, A ^a  

^a Veeco Compound Semiconductor Inc   (United States)

Author keywords

A3. Organometallic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting II V materials

Indexed keywords

CHARACTERIZATION; CRYSTAL LATTICES; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; PYROMETRY; STRAIN; TEMPERATURE MEASUREMENT;

DEFLECTOMETERS; IN SITU CHARACTERIZATION; WAFER CURVATURE; WAFERS;

GALLIUM NITRIDE;

EID: 9944238215     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.080     Document Type: Conference Paper

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