Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature

Applied Physics Letters

Volumn 86, Issue 19, 2005, Pages 1-3

  Bhattacharya, P ^a   Su, X H ^a   Chakrabarti, S ^a   Ariyawansa, G ^b   Perera, A G U ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b GEORGIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTORESPONSE; QUANTUM-DOT INFRARED PHOTODETECTORS (QDIP); ROOM TEMPERATURE; SPECTRAL RESPONSE;

CURRENT DENSITY; ELECTRON ENERGY LEVELS; ETCHING; PHOTOCURRENTS; PHOTOLITHOGRAPHY; QUANTUM EFFICIENCY; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM DOTS; SPECTROPHOTOMETERS;

INFRARED DETECTORS;

EID: 20844442627     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1923766     Document Type: Article

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