Temperature-dependent photoresponsivity and high-temperature (190 K) operation of a quantum dot infrared photodetector

Applied Physics Letters

Volumn 91, Issue 5, 2007, Pages

  Lu, Xuejun ^a   Vaillancourt, Jarrod ^a   Meisner, Mark J ^b  

^a University of Massachusetts   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PEAK DETECTION WAVELENGTH; QUANTUM DOT INFRARED PHOTODETECTOR; TEMPERATURE DEPENDENT PHOTORESPONSIVITY; TEMPERATURE RANGE;

HIGH TEMPERATURE OPERATIONS; INDIUM COMPOUNDS; PHOTORESISTORS; SEMICONDUCTOR QUANTUM DOTS; WAVELENGTH;

PHOTODETECTORS;

EID: 34547670418     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2766655     Document Type: Article

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