Long-term reliability of Al-free InGaAsP/GaAs (λ = 808 nm) lasers at high-power high-temperature operation

Applied Physics Letters

Volumn 71, Issue 21, 1997, Pages 3042-3044

  Diaz, J ^a   Yi, H J ^a   Razeghi, M ^a   Burnham, G T ^b  

^a NORTHWESTERN UNIVERSITY   (United States)

^b Semiconduct Laser Intl Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000922289     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119431     Document Type: Article

References (21)

1. I. Eliashevich, H. Diaz, H. Yi, L. Wang, and M. Razeghi, Appl. Phys. Lett. 66, 3087 (1995).
2. S. L. Yellen, A. Shepard, C. Harding, J. Baumann, R. Waters, D. Garbuzov, V. Pjataev, V. Kocherigin, and P. Zory, IEEE Photonics Technol. Lett. 4, 1328 (1992).
3. D. Z. Garbuzov, N. Ju, A. Antonishkis, A. Bondarev, A. Gulakov, S. Zhigulin, N. Katsavets, A. Kochergin, and E. Rafailov, IEEE J. Quantum Electron. QE-27, 1531 (1991).
4. M. Razeghi, MOCVD Challenge (Adam Hilger, Bristol and Philadelphia, 1989), p. 226.
5. M. Razeghi, "Patent on 0.808 μm InGaAsP/GaAs lasers for Nd:YAG Pumping," Patent No. 56032, Thompson C. S. F., France, 1988.
6. 1-y," Patent No. 57666, Thompson C. S. F., France, 1990.
7. M. Fukuda, M. Okayasu, J. Temmyo, and J. Nakano, IEEE J. Quantum Electron. QE-30, 471 (1994).
8. M. Razeghi, Nature (London) 369, 631 (1994); Mater. Sci. Eng. B 35, 34 (1995).
9. M. Razeghi, Nature (London) 369, 631 (1994); Mater. Sci. Eng. B 35, 34 (1995).
10. W. Plano, J. S. Major, Jr., and D. F. Welch, IEEE Photonics Technol. Lett. 6, 465 (1994).
11. J. K. Wade, L. J. Mawst, D. Botez, M. Jansen, F. Fang, and R. F. Nabiev, Appl. Phys. Lett. 70, 149 (1997).
12. M. C. Wang, D. Huang, P. Lin, L. Dechiaro, C. Zah, S. Ovadia, T. Lee, and D. Darby, Appl. Phys. Lett. 64, 3145 (1994).
13. The 980 nm InGaAs/GaAs/InGaP lasers have a similar SCH with two undoped 40-Å-thick InGaAs quantum wells separated by a 100-Å-thick GaAs barrier, embedded in 1200-Å-thick GaAs waveguiding layers.
14. H. Yi, J. Diaz, L. Wang, I. Eliashevich, S. Kim, R. Williams, M. Erdtmann, X. He, E. Kolev, and M. Razeghi, Appl. Phys. Lett. 66, 3251 (1995); J. Appl. Phys., 79, 8832 (1996); Appl. Phys. Lett. 65, 2260 (1994).
15. H. Yi, J. Diaz, L. Wang, I. Eliashevich, S. Kim, R. Williams, M. Erdtmann, X. He, E. Kolev, and M. Razeghi, Appl. Phys. Lett. 66, 3251 (1995); J. Appl. Phys., 79, 8832 (1996); Appl. Phys. Lett. 65, 2260 (1994).
16. H. Yi, J. Diaz, L. Wang, I. Eliashevich, S. Kim, R. Williams, M. Erdtmann, X. He, E. Kolev, and M. Razeghi, Appl. Phys. Lett. 66, 3251 (1995); J. Appl. Phys., 79, 8832 (1996); Appl. Phys. Lett. 65, 2260 (1994).
17. B. Gelmont and G. Zegrya, Sov. Phys. Semicond. 25, 1216 (1991).
18. G. Zegrya, A. Andreev, N. Gun'ko, and E. Frolushkina, Proc. SPIE 2399, 307 (1995).
19. M. Razeghi, H. Yi, and Litvinov, J. Appl. Phys. (1997) (submitted).
20. D. Mehuys, R. Lang, M. Mittelstein, J. Salzman, and A. Yariv, IEEE J. Quantum Electron. 23, 1909 (1987).
21. H. Yi, J. Diaz, B. Lane, and M. Razeghi, Appl. Phys. Lett. 68, 2983 (1996).