SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 3, 2004, Pages 1051-1054

Electrical properties of melt-epitaxy-grown InAs0.04Sb 0.96 layers with cutoff wavelength of 12 μm

(5) Gao, Yu Zhu a Gong, Xiu Ying a Gui, Yong Sheng a Yamaguchi, Tomuo b Dai, Ning a

a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

b SHIZUOKA UNIVERSITY (Japan)

Author keywords

Electron mobility; InAsSb; Melt epitaxy; Perfection; Purity; Scattering

Indexed keywords

CARRIER CONCENTRATION; CONTAMINATION; ELECTRON MOBILITY; EPITAXIAL GROWTH; FUNCTIONS; FUSED SILICA; HIGH TEMPERATURE EFFECTS; LIGHT SCATTERING; SAMPLING;

INASSB; MELT EPITAXY; PERFECTION; PURITY;

INDIUM COMPOUNDS;

EID: 2442424456 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.1051 Document Type: Article

Times cited : (27)

References (12)

1
- 0006508826
- Y. Z. Gao, X. Y. Gong, H. Kan, M. Aoyama and T. Yamaguchi: Jpn. J. Appl. Phys. 38 (1999) 1939.
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 1939
- Gao, Y.Z.¹ Gong, X.Y.² Kan, H.³ Aoyama, M.⁴ Yamaguchi, T.⁵

2
- 0033645722
- Y. Z. Gao, H. Kan and T. Yamaguchi: Cryst. Res. Technol. 35 (2000) 943.
- (2000) Cryst. Res. Technol. , vol.35 , pp. 943
- Gao, Y.Z.¹ Kan, H.² Yamaguchi, T.³

3
- 0034297430
- Y. Z. Gao, H. Kan, J. I. Murata, M. Aoyama and T. Yamaguchi: J. Electron. Mater. 29 (2000) L25.
- (2000) J. Electron. Mater. , vol.29
- Gao, Y.Z.¹ Kan, H.² Murata, J.I.³ Aoyama, M.⁴ Yamaguchi, T.⁵

4
- 0036129466
- Y. Z. Gao, H. Kan, F. S. Gao, X. Y. Gong and T. Yamaguchi: J. Cryst. Growth 234 (2002) 85.
- (2002) J. Cryst. Growth , vol.234 , pp. 85
- Gao, Y.Z.¹ Kan, H.² Gao, F.S.³ Gong, X.Y.⁴ Yamaguchi, T.⁵

5
- 0016873315
- J. W. Harrison and J. R. Hauser: J. Appl. Phys. 47 (1976) 292.
- (1976) J. Appl. Phys. , vol.47 , pp. 292
- Harrison, J.W.¹ Hauser, J.R.²

6
- 0000325673
- V. W. L. Chin, R. J. Egan and T. L. Tansley: J. Appl. Phys. 69 (1991) 3571.
- (1991) J. Appl. Phys. , vol.69 , pp. 3571
- Chin, V.W.L.¹ Egan, R.J.² Tansley, T.L.³

7
- 2442543858
- V. W. L. Chin, R. T. Egan and T. L. Tansley: J. Appl. Phys. 72 (1992) 1410.
- (1992) J. Appl. Phys. , vol.72 , pp. 1410
- Chin, V.W.L.¹ Egan, R.T.² Tansley, T.L.³

8
- 0000406714
- C. Besikci, Y. H. Choi, G. Labeyrie, E. Bigan and M. Razeghi, J. B. Cohen, J. Carsello and V. P. Dravid: J. Appl. Phys. 76 (1994) 5820.
- (1994) J. Appl. Phys. , vol.76 , pp. 5820
- Besikci, C.¹ Choi, Y.H.² Labeyrie, G.³ Bigan, E.⁴ Razeghi, M.⁵ Cohen, J.B.⁶ Carsello, J.⁷ Dravid, V.P.⁸

9
- 2442443525
- Y. Z. Gao, H. Kan, X. Y. Gong and T. Yamaguchi: Recent Res. Develop. Appl. Chem. 1 (2002) 1.
- (2002) Recent Res. Develop. Appl. Chem. , vol.1 , pp. 1
- Gao, Y.Z.¹ Kan, H.² Gong, X.Y.³ Yamaguchi, T.⁴

10
- 79958236873
- V. K. Dixit, B. Bansal, V. Venkataraman, H. L. Bhat, G. N. Subbamna, K. S. Chandrasekharan and B. M. Arora: Appl. Phys. Lett. 80 (2002) 2102.
- (2002) Appl. Phys. Lett. , vol.80 , pp. 2102
- Dixit, V.K.¹ Bansal, B.² Venkataraman, V.³ Bhat, H.L.⁴ Subbamna, G.N.⁵ Chandrasekharan, K.S.⁶ Arora, B.M.⁷

11
- 2442541748
- S. Tsukamoto, P. Bhattacharya, Y. C. Chen and J. H. Kim: J. Appl. Phys. 67 (1990) 6819.
- (1990) J. Appl. Phys. , vol.67 , pp. 6819
- Tsukamoto, S.¹ Bhattacharya, P.² Chen, Y.C.³ Kim, J.H.⁴

12
- 0004062702
- Prentice Hall, Eaglewood Cliffs
- C. M. Wolfe, N. Holonyak and G. E. Stillman: Physical Properties of Semiconductors (Prentice Hall, Eaglewood Cliffs, 1989).
- (1989) Physical Properties of Semiconductors
- Wolfe, C.M.¹ Holonyak, N.² Stillman, G.E.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.