Growth and characterization of InAs/GaSb type II superlattices for long-wavelength infrared detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3287, Issue , 1998, Pages 30-37

  Mohseni, Hooman ^a   Michel, Erick ^a   Razeghi, Manijeh ^a   Mitchel, William ^a   Brown, Gail ^a  

^a Northwestern University   (United States)

Author keywords

Detectivity; HgCdTe; Infrared detector; Noise; Quantum well; Type II; Uncooled detector

Indexed keywords

CHARACTERIZATION; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SUPERLATTICES;

PHOTOCONDUCTIVE DETECTORS;

INFRARED DETECTORS;

EID: 0032224411     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304497     Document Type: Conference Paper

References (15)

1. Semiconductor infrared detectors
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5. A new semiconductor superlattice
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9. Auger lifetime in ideal InGaSb/InAs superlattices
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11. Band lineups and deformation potentials in the model-solid theory
12. Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range