Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AIN multiple-quantum wells

Applied Physics Letters

Volumn 84, Issue 7, 2004, Pages 1102-1104

  Hamazaki, J ^a   Matsui, S ^a   Kunugita, H ^a   Ema, K ^a   Kanazawa, H ^a   Tachibana, T ^a   Kikuchi, A ^a   Kishino, K ^a  

^a SOPHIA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; HETEROJUNCTIONS; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; SAPPHIRE; SCATTERING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

PUMP-PROBE TECHNIQUE; SURFACE NITRIDATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1542574219     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1647275     Document Type: Article

References (12)

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11. (3) because of the large detuning.
12. B=24°, then E⊥ E/2.5 for the Brewster-angle configuration.