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Volumn 15, Issue 9, 2003, Pages 1273-1275

Demonstration of 256 × 256 focal plane array based on Al-free GaInAs-InP QWIP

Author keywords

Arrays; Indium compounds; Infrared detectors; Infrared imaging; Lithography; Quantum well devices

Indexed keywords

DRY ETCHING; INFRARED DETECTORS; INFRARED IMAGING; LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 0141563456     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.816667     Document Type: Article
Times cited : (29)

References (11)
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  • 5
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    • M. Razeghi, J. Jiang, C. Jelen, and G. J. Brown, "GaInAs/InP quantum-well infrared photodetectors grown on Si substrates," Proc. SPIE, vol. 4454, pp. 78-84, Nov. 2001.
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    • C. J. Chen, K. K. Choi, W. H. Chang, and D. C. Tsui, "Two-color corrugated quantum-well infrared photodetector for remote temperature sensing," Appl. Phys. Lett., vol. 72, pp. 7-9, Jan. 1998.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.