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1
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0032657521
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4H-SiC visible blind UV avalanche photodiodes
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May
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Electron. Lett
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Yan, F.1
Luo, Y.2
Zhao, J.H.3
Olsen, G.H.4
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2
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0343526838
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Demonstration of the first 4H-SiC avalanche photodiodes
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F. Yan, J. H. Zhao, and G. Olsen, "Demonstration of the first 4H-SiC avalanche photodiodes," Solid State Electron., vol. 44, pp. 341-346, 2000.
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Solid State Electron
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Yan, F.1
Zhao, J.H.2
Olsen, G.3
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3
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0036742265
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Multiplication and excess noise characteristics of thin 4H-SiC avalanche photodiodes
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Sep
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B. K. Ng, F. Yan, J. P. R. David, R. C. Tozer, G. J. Rees, C. Qin, and J. H. Zhao, "Multiplication and excess noise characteristics of thin 4H-SiC avalanche photodiodes," IEEE Photon. Technol. Lett., vol. 14, no. 9, pp. 1342-1344, Sep. 2002.
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IEEE Photon. Technol. Lett
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Ng, B.K.1
Yan, F.2
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Tozer, R.C.4
Rees, G.J.5
Qin, C.6
Zhao, J.H.7
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4
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0345412054
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Low dark current 4H-SiC avalanche photodiodes
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Nov
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X. Guo, A. L. Beck, B. Yang, and J. C. Campbell, "Low dark current 4H-SiC avalanche photodiodes," Electron. Lett., vol. 39, no. 23, pp. 1673-1674, Nov. 2003.
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Electron. Lett
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Guo, X.1
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Yang, B.3
Campbell, J.C.4
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5
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17744366211
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Study of reverse dark current in 4H-SiC avalanche photodiodes
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Apr
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X. Guo, A. L. Beck, X. Li, J. C. Campbell, D. Emerson, and J. Sumakeris, "Study of reverse dark current in 4H-SiC avalanche photodiodes," IEEE J. Quantum Electron., vol. 41, no. 4, pp. 562-567, Apr. 2005.
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IEEE J. Quantum Electron
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Guo, X.1
Beck, A.L.2
Li, X.3
Campbell, J.C.4
Emerson, D.5
Sumakeris, J.6
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6
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26844524747
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Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain
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Oct
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X. Guo, A. L. Beck, and J. C. Campbell, "Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain," IEEE J. Quantum Electron., vol. 41, no. 10, pp. 1213-1216, Oct. 2005.
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IEEE J. Quantum Electron
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Guo, X.1
Beck, A.L.2
Campbell, J.C.3
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7
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33745798957
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Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes
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Jan. 1
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X. Guo, L. B. Rowland, G. T. Dunne, J. A. Fronheiser, P. M. Sandvik, A. L. Beck, and J. C. Campbell, "Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes," IEEE Photon. Technol. Lett., vol. 18, no. 1, pp. 136-138, Jan. 1, 2006.
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IEEE Photon. Technol. Lett
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Guo, X.1
Rowland, L.B.2
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Fronheiser, J.A.4
Sandvik, P.M.5
Beck, A.L.6
Campbell, J.C.7
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8
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33947137661
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Performance of low-dark-current 4H-SiC avalanche photodiodes with thin multiplication layer
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Sep
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X. Guo, A. L. Beck, Z. Huang, N. Duan, J. C. Campbell, D. Emerson, and J. J. Sumakeris, "Performance of low-dark-current 4H-SiC avalanche photodiodes with thin multiplication layer," IEEE Trans. Electron Devices, vol. 53, no. 9, pp. 2259-2264, Sep. 2006.
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IEEE Trans. Electron Devices
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Guo, X.1
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Duan, N.4
Campbell, J.C.5
Emerson, D.6
Sumakeris, J.J.7
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9
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33846205585
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Low dark count rate 4H-SiC Geiger mode avalanche photodiodes operated under gated quenching at 325 nm
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A. L. Beck, X. Guo, H. Liu, A. Ghatakroy, and J. C. Campbell, "Low dark count rate 4H-SiC Geiger mode avalanche photodiodes operated under gated quenching at 325 nm," Proc. SPIE, vol. 6372, 2006.
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Proc. SPIE
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Beck, A.L.1
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Campbell, J.C.5
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10
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36248990309
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Very low dark current ultra violet 4H-SiC avalanche photodiodes
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submitted for publication
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X. Bai, X. Guo, D. Mcintosh, H. Liu, and J. C. Campbell, "Very low dark current ultra violet 4H-SiC avalanche photodiodes," IEEE J. Quantum Electron., submitted for publication.
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IEEE J. Quantum Electron
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Bai, X.1
Guo, X.2
Mcintosh, D.3
Liu, H.4
Campbell, J.C.5
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11
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0002622512
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Ionization rates and critical fields in 4H silicon carbide
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12
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0030121167
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Avalanche photodiodes and quenching circuits for single-photon detection
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