NBn structure based on InAs/GaSb type-II strained layer superlattices

Applied Physics Letters

Volumn 91, Issue 4, 2007, Pages

  Rodriguez, J B ^a   Plis, E ^a   Bishop, G ^a   Sharma, Y D ^a   Kim, H ^a   Dawson, L R ^a   Krishna, S ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF FREQUENCY; PHOTODETECTORS; PHOTODIODES; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; WAVELENGTH;

HALL GENERATION CURRENTS; OPERATING TEMPERATURE; ROOM TEMPERATURE; SURFACE RECOMBINATION;

SUPERLATTICES;

EID: 34547446713     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2760153     Document Type: Article

References (7)

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