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Progress in Crystal Growth and Characterization of Materials

Volumn 43, Issue 2-3, 2001, Pages 119-185

Growth of semi-insulating GaAs crystals in low temperature gradients by using the vapour pressure controlled Czochralski method (VCz)

(2) Neubert, M a Rudolph, P a

a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

Author keywords

Dislocations; Electrical properties; GaAs; Heat transfer; Interface; Liquid encapsulated Czochralski (LEC); Thermomechanical stress; Vapour pressure controlled Czochralski (VCz)

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; HEAT CONVECTION; INSULATING MATERIALS; LOW TEMPERATURE PROPERTIES; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN; STRESSES;

SEMIINSULATING GALLIUM ARSENIDE; THERMOELASTIC STRESS; VAPOUR PRESSURE CONTROLLED CZOCHRALSKI METHOD;

SINGLE CRYSTALS;

EID: 0035203310 PISSN: 09608974 EISSN: None Source Type: Journal
DOI: 10.1016/S0960-8974(01)00005-5 Document Type: Article

Times cited : (61)

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