Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2331-2333

  Knap, W ^a   Lusakowski, J ^b,e   Parenty, T ^c   Bollaert, S ^c   Cappy, A ^c   Popov, V V ^d   Shur, M S ^b  

^a CNRS   (France)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c INSTITUT D ELECTRONIQUE   (France)

^d INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^e UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENTS; SOURCE-DRAIN VOLTAGES; TERAHERTZ EMISSIONS;

BOUNDARY CONDITIONS; CARRIER CONCENTRATION; CAVITY RESONATORS; ELECTRIC EXCITATION; ELECTRON EMISSION; ELECTRON GAS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; PLASMA STABILITY; PLASMA WAVES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 2142828587     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1689401     Document Type: Article

References (13)

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9. 0= 80 mV.
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