GaN/AlGaN active regions for terahertz quantum cascade lasers grown by low-pressure metal organic vapor deposition

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 687-690

  Huang, G S ^a   Lu, T C ^a   Yao, H H ^a   Kuo, H C ^a   Wang, S C ^a   Sun, Greg ^b   Lin, Chih wei ^a   Chang, Li ^a   Soref, Richard A ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

A1. X ray diffraction; A3. Metal organic chemical vapor deposition; B1. Nitrides

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHONONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ALGAN; PHONON FREQUENCY SHIFT; PHONON ZONE FOLDING; QUANTUM CASCADE LASERS;

SEMICONDUCTOR LASERS;

EID: 33846432373     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.106     Document Type: Article

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