-
1
-
-
3242772124
-
UV-specific (320-365 nm) digital camera based on a 128 × 128 focal plane array of GaN/AIGaN p-i-n photodiodes
-
J. D. Brown, J. Boney, J. Matthews, P. Srinivasan, J. F. Schetzina, T. Nohava, W. Yang, and S. Krishnankutty, "UV-specific (320-365 nm) digital camera based on a 128 × 128 focal plane array of GaN/AIGaN p-i-n photodiodes," MRS Internet J. Nitride Semicond. Res., vol. 5, no. 6, 2000.
-
(2000)
MRS Internet J. Nitride Semicond. Res.
, vol.5
, Issue.6
-
-
Brown, J.D.1
Boney, J.2
Matthews, J.3
Srinivasan, P.4
Schetzina, J.F.5
Nohava, T.6
Yang, W.7
Krishnankutty, S.8
-
3
-
-
0000470390
-
Visible blind GaN p-i-n photodiodes
-
D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, and M. Razeghi, "Visible blind GaN p-i-n photodiodes," Appl. Phys. Lett., vol. 72, p. 3303, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 3303
-
-
Walker, D.1
Saxler, A.2
Kung, P.3
Zhang, X.4
Hamilton, M.5
Diaz, J.6
Razeghi, M.7
-
4
-
-
0033739952
-
1-xN p-i-n photodetectorsgrown on LEO and non LEO GaN
-
1-xN p-i-n photodetectorsgrown on LEO and non LEO GaN," Proc. SPIE, vol. 3948, p. 265, 2000.
-
(2000)
Proc. SPIE
, vol.3948
, pp. 265
-
-
Sandvik, P.1
Walker, D.2
Kung, P.3
Mi, K.4
Shahedipour, F.5
Kumar, V.6
Zhang, X.7
Diaz, J.8
Jelen, C.9
Razeghi, M.10
-
5
-
-
0000835981
-
High-speed, low-noise metal-semiconductor-metal ultravioletphotodetectors based on GaN
-
D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F. J. Sanchez, J. Diaz, and M. Razeghi, "High-speed, low-noise metal-semiconductor-metal ultravioletphotodetectors based on GaN," Appl. Phys. Lett., vol. 74, p. 762, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 762
-
-
Walker, D.1
Monroy, E.2
Kung, P.3
Wu, J.4
Hamilton, M.5
Sanchez, F.J.6
Diaz, J.7
Razeghi, M.8
-
6
-
-
0029373785
-
1-xN-Ge on sapphire and silicon substrates
-
1-xN-Ge on sapphire and silicon substrates," Appl. Phys. Lett., vol. 67, p. 1745, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 1745
-
-
Zhang, X.1
Kung, P.2
Saxler, A.3
Walker, D.4
Wang, T.C.5
Razeghi, M.6
-
7
-
-
0030575014
-
AlGaN ultravioletphotoconductors grown on sapphire
-
D. Walker, X. Zhang, P. Kung, A. Saxler, S. Javadpour, J. Xu, and M. Razeghi, "AlGaN ultravioletphotoconductors grown on sapphire," Appl. Phys. Lett., vol. 68, p. 2100, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.68
, pp. 2100
-
-
Walker, D.1
Zhang, X.2
Kung, P.3
Saxler, A.4
Javadpour, S.5
Xu, J.6
Razeghi, M.7
-
8
-
-
5944240962
-
1-xN (0 <= x <= 1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
-
1-xN (0 <= x <= 1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition," Appl. Phys. Lett., vol. 70, p. 949, 1997.
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 949
-
-
Walker, D.1
Zhang, X.2
Saxler, A.3
Kung, P.4
Xu, J.5
Razeghi, M.6
-
9
-
-
0000765038
-
High-quality visible-blind AlGaN p-i-n photodiodes
-
E. Monroy, M. Hamilton, D. Walker, P. Kung, F. J. Sanchez, and M. Razeghi, "High-quality visible-blind AlGaN p-i-n photodiodes," Appl. Phys. Lett., vol. 74, p. 1171, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1171
-
-
Monroy, E.1
Hamilton, M.2
Walker, D.3
Kung, P.4
Sanchez, F.J.5
Razeghi, M.6
|