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1
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0028547371
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High-efficiency, high-temperature mid-infrared λ = 4 μm InAsSb/GaSb lasers
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H. Q. Le, G. W. Turner, J. R. Ochoa, and A. Sanchez, "High-efficiency, high-temperature mid-infrared λ = 4 μm InAsSb/GaSb lasers," Electron. Lett., vol. 30, pp. 1944-1945, 1994.
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(1994)
Electron. Lett.
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Le, H.Q.1
Turner, G.W.2
Ochoa, J.R.3
Sanchez, A.4
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2
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0029326941
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InAsSb/InAlAs strained quantum-well lasers emitting at 4.5 μm
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H. K. Choi, G. W. Turner, and H. Q. Le, "InAsSb/InAlAs strained quantum-well lasers emitting at 4.5 μm," Appl. Phys. Lett., vol. 66, pp. 3543-3545, 1995.
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(1995)
Appl. Phys. Lett.
, vol.66
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Choi, H.K.1
Turner, G.W.2
Le, H.Q.3
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3
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5844260193
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Mid-wave infrared sources based on GaInSb/InAs superlattice active layers
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M. O. Manasreh, Ed. Newark, NJ: Gordon and Breach, to be published
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R. H. Miles and T. C. Hasenberg, "Mid-wave infrared sources based on GaInSb/InAs superlattice active layers," in Antimonide Related Heterostructures and Their Applications, M. O. Manasreh, Ed. Newark, NJ: Gordon and Breach, to be published.
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Antimonide Related Heterostructures and Their Applications
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Miles, R.H.1
Hasenberg, T.C.2
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4
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0345777094
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Type-II mid-infrared quantum well lasers
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J. I. Malin, J. R. Meyer, C. L. Felix, C. A. Hoffman, L. Goldberg, F. J. Bartoli, C.-H. Lin, P. C. Chang, S. J. Murry, R. Q. Yang, and S.-S. Pei, "Type-II mid-infrared quantum well lasers," Appl. Phys. Lett., vol. 68, pp. 2976-2978, 1996.
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Appl. Phys. Lett.
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Malin, J.I.1
Meyer, J.R.2
Felix, C.L.3
Hoffman, C.A.4
Goldberg, L.5
Bartoli, F.J.6
Lin, C.-H.7
Chang, P.C.8
Murry, S.J.9
Yang, R.Q.10
Pei, S.-S.11
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6
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21544465838
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xSb superlattices
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xSb superlattices," Appl. Phys. Lett., vol. 64, pp. 3160-3162, 1994.
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(1994)
Appl. Phys. Lett.
, vol.64
, pp. 3160-3162
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Youngdale, E.R.1
Meyer, J.R.2
Hoffman, C.A.3
Bartoli, F.J.4
Grein, C.H.5
Young, P.M.6
Ehrenreich, H.7
Miles, R.H.8
Chow, D.H.9
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7
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5844304809
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unpublished data
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J. R. Lindle, E. R. Youngdale, J. R. Meyer, C. A. Hoffman, R. H. Miles, B. R. Bennett, J. R. Waterman, B. V. Shanabrook, and R. J. Wagner, unpublished data.
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Lindle, J.R.1
Youngdale, E.R.2
Meyer, J.R.3
Hoffman, C.A.4
Miles, R.H.5
Bennett, B.R.6
Waterman, J.R.7
Shanabrook, B.V.8
Wagner, R.J.9
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8
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5844423729
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Antimonide-based quantum heterostructure devices
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M. O. Manasreh, Ed. Newark, NJ: Gordon and Breach, to be published
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J. R. Meyer, J. I. Malin, I. Vurgaftman, C. A. Hoffman, and L. R. Ram-Mohan, "Antimonide-based quantum heterostructure devices," in Antimonide-Related Heterostructures and Their Applications, M. O. Manasreh, Ed. Newark, NJ: Gordon and Breach, to be published.
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Antimonide-Related Heterostructures and Their Applications
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Meyer, J.R.1
Malin, J.I.2
Vurgaftman, I.3
Hoffman, C.A.4
Ram-Mohan, L.R.5
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9
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0029253732
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xSb/InAs superlattice diode laser
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xSb/InAs superlattice diode laser," Electron. Lett., vol. 31, pp. 275-276, 1995.
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(1995)
Electron. Lett.
, vol.31
, pp. 275-276
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Hasenberg, T.C.1
Chow, D.H.2
Kost, A.R.3
Miles, R.H.4
West, L.5
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10
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0030215002
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Type II mid-IR lasers operating above room temperature
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J. I. Malin, C. L. Felix, J. R. Meyer, C. A. Hoffman, J. F. Pinto, C.-H. Lin, P. C. Chang, S. J. Murry, and S.-S. Pei, "Type II mid-IR lasers operating above room temperature," Electron. Lett., vol. 32, pp. 1593-1595, 1996.
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(1996)
Electron. Lett.
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, pp. 1593-1595
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Malin, J.I.1
Felix, C.L.2
Meyer, J.R.3
Hoffman, C.A.4
Pinto, J.F.5
Lin, C.-H.6
Chang, P.C.7
Murry, S.J.8
Pei, S.-S.9
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11
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0030574950
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Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum well
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S. W. McCahon, S. A. Anson, D.-J. Jang, M. E. Flatte, T. F. Boggess, D. H. Chow, T. H. Hasenberg, and C. H. Grein, "Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum well," Appl. Phys. Lett., vol. 68, pp. 2135-2137, 1996.
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(1996)
Appl. Phys. Lett.
, vol.68
, pp. 2135-2137
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McCahon, S.W.1
Anson, S.A.2
Jang, D.-J.3
Flatte, M.E.4
Boggess, T.F.5
Chow, D.H.6
Hasenberg, T.H.7
Grein, C.H.8
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12
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0029638629
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Type-II quantum-well lasers for the mid-wavelength infrared
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J. R. Meyer, C. A. Hoffman, F. J. Bartoli, and L. R. Ram-Mohan, "Type-II quantum-well lasers for the mid-wavelength infrared," Appl. Phys. Lett., vol. 67, pp. 757-759, 1995.
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(1995)
Appl. Phys. Lett.
, vol.67
, pp. 757-759
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Meyer, J.R.1
Hoffman, C.A.2
Bartoli, F.J.3
Ram-Mohan, L.R.4
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13
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0031141327
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MBE grown mid-infrared type-II quantum well lasers
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to be published
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C.-H. Lin, S. J. Murry, D. Zhang, P. C. Chang, Y. Zhou, S.-S. Pei, J. I. Malin, C. L. Felix, J. R. Meyer, C. A. Hoffman, and J. F. Pinto, "MBE grown mid-infrared type-II quantum well lasers," J. Cryst. Growth, to be published.
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J. Cryst. Growth
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Lin, C.-H.1
Murry, S.J.2
Zhang, D.3
Chang, P.C.4
Zhou, Y.5
Pei, S.-S.6
Malin, J.I.7
Felix, C.L.8
Meyer, J.R.9
Hoffman, C.A.10
Pinto, J.F.11
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14
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0000721344
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Auger lifetime in InAs, InAsSb, and InAsSb-InAlAsSb quantum wells
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J. R. Lindle, J. R. Meyer, C. A. Hoffman, F. J. Bartoli, G. W. Turner, and H. K. Choi, "Auger lifetime in InAs, InAsSb, and InAsSb-InAlAsSb quantum wells," Appl. Phys. Lett., vol. 67, pp. 3153-3155, 1995.
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(1995)
Appl. Phys. Lett.
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Lindle, J.R.1
Meyer, J.R.2
Hoffman, C.A.3
Bartoli, F.J.4
Turner, G.W.5
Choi, H.K.6
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15
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5844309766
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Effects of bandgap, lifetime, and other nonuniformities on diode laser thresholds and slope efficiencies
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to be published
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I. Vurgaftman and J. R. Meyer, "Effects of bandgap, lifetime, and other nonuniformities on diode laser thresholds and slope efficiencies," IEEE J. Select. Topics Quantum Electron., to be published.
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IEEE J. Select. Topics Quantum Electron.
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Vurgaftman, I.1
Meyer, J.R.2
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16
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5844290200
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manuscript in preparation
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C.-H. Lin, S. J. Murry, D. Zhang, S.-S. Pei, H. Q. Le, C. L. Felix, and J. R. Meyer, manuscript in preparation.
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Lin, C.-H.1
Murry, S.J.2
Zhang, D.3
Pei, S.-S.4
Le, H.Q.5
Felix, C.L.6
Meyer, J.R.7
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