Dark current suppression in type II InAsGaSb superlattice long wavelength infrared photodiodes with M-structure barrier

Applied Physics Letters

Volumn 91, Issue 16, 2007, Pages

  Nguyen, Binh Minh ^a   Hoffman, Darin ^a   Delaunay, Pierre Yves ^a   Razeghi, Manijeh ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DARK CURRENTS; ELECTRON TUNNELING; INDIUM ARSENIDE; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES;

BARRIER THICKNESS; CARRIER EFFECTIVE MASS; DARK CURRENT SUPPRESSION; INASGASB SUPERLATTICE; M-STRUCTURE BARRIER; SUPERLATTICE LONG WAVELENGTH INFRARED PHOTODIODES; TUNNELING TRANSPORT;

PHOTODIODES;

EID: 35548998729     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2800808     Document Type: Article

References (9)

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