Band edge tunability of M -structure for heterojunction design in Sb based type II superlattice photodiodes

Applied Physics Letters

Volumn 93, Issue 16, 2008, Pages

  Nguyen, Binh Minh ^a   Hoffman, Darin ^a   Delaunay, Pierre Yves ^a   Huang, Edward Kwei Wei ^a   Razeghi, Manijeh ^a   Pellegrino, Joe ^b  

^a Northwestern University   (United States)

^b NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS;

BAND DISCONTINUITIES; BAND EDGES; EMPIRICAL TIGHT BINDINGS; ENERGY LEVELS; EXPERIMENTAL MEASUREMENTS; EXPERIMENTAL REALIZATIONS; HETERODIODES; HETEROSTRUCTURES; OPTICAL CHARACTERIZATIONS; SUPERLATTICE PHOTODIODES; TUNABILITY; TYPE II;

PHOTODIODES;

EID: 54949117542     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3005196     Document Type: Article

References (8)

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