High performance InAs/Ga1-xInxSb superlattice infrared photodiodes

Applied Physics Letters

Volumn 71, Issue 22, 1997, Pages 3251-3253

  Fuchs, F ^a   Weimer, U ^a   Fletschen, W ^a   Schmitz, J ^a   Ahlswede, E ^a   Walther, M ^a   Wagner, J ^a   Koidl, P ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; ENERGY GAP; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUPERLATTICES;

CAPACITANCE VOLTAGE MEASUREMENT; CURRENT VOLTAGE MEASUREMENT; INFRARED PHOTODIODE; TUNNELING CURRENT;

PHOTODIODES;

EID: 0031377405     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120551     Document Type: Article

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