Direct current superposed dual-frequency capacitively coupled plasmas in selective etching of SiOCH over SiC

Journal of Physics D: Applied Physics

Volumn 45, Issue 2, 2012, Pages

  Yamaguchi, Tsuyoshi ^a   Komuro, Tatsuya ^a   Koshimizu, Chishio ^b   Takashima, Seigo ^c   Takeda, Keigo ^a   Kondo, Hiroki ^a   Ishikawa, Kenji ^a   Sekine, Makoto ^a   Hori, Masaru ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b TOKYO ELECTRON LTD   (Japan)

^c Nagoya Urban Industries Promotion Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; BULK DENSITY; CAPACITIVELY COUPLED PLASMAS; CHEMICAL SPECIES; COUNTER ELECTRODES; DC BIAS; DIRECT CURRENT; DUAL FREQUENCY; GASEOUS PHASE; HIGHLY ENERGETIC IONS; SELECTIVE ETCHING; SURFACE LOSS;

AMORPHOUS CARBON; AMORPHOUS FILMS; AMORPHOUS SILICON; CARBON FILMS; ETCHING; INDUCTIVELY COUPLED PLASMA; OXIDE FILMS; PLASMA DENSITY; PLASMA SHEATHS; SILICON CARBIDE; SILICON OXIDES; SILICON WAFERS;

DC POWER TRANSMISSION;

EID: 84255171623     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/2/025203     Document Type: Article

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