Dielectric film etching in semiconductor device manufacturing - Development of SiO 2 etching and the next generation plasma reactor

Applied Surface Science

Volumn 192, Issue 1-4, 2002, Pages 270-298

  Sekine, Makoto ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Dielectric film etching; Fluorocarbon gas; Magnetically enhanced plasma; Next generation plasma reactor; Reactive ion etching; Self aligned contact; Semiconductor device

Indexed keywords

CHEMICAL REACTORS; DIELECTRIC FILMS; DISSOCIATION; ELECTRON DEVICES; FLUOROCARBONS; MAGNETIC FIELD EFFECTS; PARAMETER ESTIMATION; PLASMA DEVICES; PLASMA ETCHING; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SURFACE REACTIONS;

PLASMA REACTORS;

DRY ETCHING;

EID: 0037198339     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00031-4     Document Type: Conference Paper

References (62)